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Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more

  • US 9,583,509 B2
  • Filed: 08/25/2015
  • Issued: 02/28/2017
  • Est. Priority Date: 08/07/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and

    a pixel portion comprising a capacitor,wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, gallium, and zinc,wherein the oxide semiconductor layer comprises a crystal,wherein the oxide semiconductor layer has a degree of crystallization of 80% or more, andwherein the oxide semiconductor layer is interposed between two gate electrodes.

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