Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or more
First Claim
1. A semiconductor device comprising:
- a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and
a pixel portion comprising a capacitor,wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, gallium, and zinc,wherein the oxide semiconductor layer comprises a crystal,wherein the oxide semiconductor layer has a degree of crystallization of 80% or more, andwherein the oxide semiconductor layer is interposed between two gate electrodes.
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Abstract
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate is provided. The driver circuit portion and the display portion include thin film transistors in which a semiconductor layer includes an oxide semiconductor; a first wiring; and a second wiring. The thin film transistors each include a source electrode layer and a drain electrode layer. In the thin film transistor in the driver circuit portion, the semiconductor layer is sandwiched between a gate electrode layer and a conductive layer. The first wiring and the second wiring are electrically connected to each other in an opening provided in a gate insulating film through an oxide conductive layer.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and a pixel portion comprising a capacitor, wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, gallium, and zinc, wherein the oxide semiconductor layer comprises a crystal, wherein the oxide semiconductor layer has a degree of crystallization of 80% or more, and wherein the oxide semiconductor layer is interposed between two gate electrodes. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a driver circuit portion comprising a shift register having a plurality of n-channel transistors; and a pixel portion comprising a capacitor, wherein the plurality of n-channel transistors each comprise an oxide semiconductor layer containing indium, tin, and zinc, wherein the oxide semiconductor layer comprises a crystal, wherein the oxide semiconductor layer has a degree of crystallization of 80% or more, and wherein the oxide semiconductor layer is interposed between two gate electrodes. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification