Conformal doping for punch through stopper in fin field effect transistor devices
First Claim
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1. A method of forming a semiconductor device comprising:
- forming a spacer of a dielectric material on sidewalls of fin structures, wherein adjacent fin structures are separated by a dielectric isolation region;
recessing the dielectric isolation regions to expose a portion of the fin structures underlying the spacer of the dielectric material;
doping the exposed portion of the fin structures underlying the spacer with a dopant having a first conductivity type to form a punch through stop region;
removing the spacer; and
forming source and drain regions on the source and drain region portions of the fin structure, the source and drain regions doped with a second conductivity type dopant.
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Abstract
A method of forming a punch through stop region that includes forming isolation regions of a first dielectric material between adjacent fin structures and forming a spacer of a second dielectric material on sidewalls of the fin structure. The first dielectric material of the isolation region may be recessed with an etch process that is selective to the second dielectric material to expose a base sidewall portion of the fin structures. Gas phase doping may introduce a first conductivity type dopant to the base sidewall portion of the fin structure forming a punch through stop region underlying a channel region of the fin structures.
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Citations
16 Claims
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1. A method of forming a semiconductor device comprising:
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forming a spacer of a dielectric material on sidewalls of fin structures, wherein adjacent fin structures are separated by a dielectric isolation region; recessing the dielectric isolation regions to expose a portion of the fin structures underlying the spacer of the dielectric material; doping the exposed portion of the fin structures underlying the spacer with a dopant having a first conductivity type to form a punch through stop region; removing the spacer; and forming source and drain regions on the source and drain region portions of the fin structure, the source and drain regions doped with a second conductivity type dopant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a punch through stop region comprising:
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forming isolation regions of a first dielectric material between fin structures; forming a spacer of a second dielectric material on sidewalls of the fin structures; recessing the first dielectric material of the isolation region with an etch process that is selective to the second dielectric material to expose a base sidewall portion of the fin structures; and gas phase doping to introduce a punch through stop dopant to the base sidewall portion of the fin structure forming a punch through stop region underlying a channel region of the fin structures. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification