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Method for manufacturing injection-enhanced insulated-gate bipolar transistor

  • US 9,583,587 B2
  • Filed: 07/23/2014
  • Issued: 02/28/2017
  • Est. Priority Date: 07/23/2013
  • Status: Active Grant
First Claim
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1. A method of manufacturing an injection enhanced IGBT (Insulated Gate Bipolar Transistor), comprising steps as follow:

  • providing an N-type substrate;

    forming a P-type doped layer on the N-type substrate;

    forming a hard layer on the P-type doped layer;

    etching the hard layer to form a hard layer having a trench pattern;

    etching the P-type doped layer to form a trench extending into the N-type substrate;

    forming an N-type doped layer on a sidewall and a bottom of the trench;

    removing the hard layer having the trench pattern;

    performing a drive-in to the P-type dopant of the P-type doped layer and the N-type dopant of the N-type doped layer together, the P-type dopant forming a P-type base region by diffusing, and the N-type dopant forming an N-type buffer layer by diffusing;

    forming a gate oxide dielectric layer on a surface of the trench; and

    depositing a polysilicon layer in the trench on which the gate oxide dielectric layer is formed.

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