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Trench MOSFET having reduced gate charge

  • US 9,583,611 B2
  • Filed: 03/14/2016
  • Issued: 02/28/2017
  • Est. Priority Date: 05/30/2014
  • Status: Active Grant
First Claim
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1. A transistor device, comprising:

  • a drain region;

    a source region positioned above the drain region;

    an active transistor cell including a first gate electrode isolated from a portion of the source region adjacent to the first gate electrode; and

    a diode connected transistor cell positioned adjacent to the active transistor cell, the diode connected transistor cell including a second gate electrode coupled to the source region.

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