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Oxide semiconductor film, method for forming oxide semiconductor film, and semiconductor device

  • US 9,583,632 B2
  • Filed: 05/15/2014
  • Issued: 02/28/2017
  • Est. Priority Date: 07/19/2013
  • Status: Active Grant
First Claim
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1. An oxide semiconductor film comprising:

  • a plurality of plate particles each having a structure in which layers including a gallium atom, a zinc atom, and an oxygen atom are provided over and under a layer including an indium atom and an oxygen atom,wherein the plurality of plate particles is arranged irregularly.

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