High-performance LED fabrication
First Claim
1. A light emitting flip-chip on mirror apparatus comprising:
- an electrically-conductive n-doped bulk GaN-containing substrate;
an epitaxially-grown n-type layer overlying the substrate;
an epitaxially-grown active region overlying the epitaxially-grown n-type layer;
an epitaxially-grown p-type layer overlying the epitaxially-grown active region;
an p-contact overlying at least a portion of the epitaxially-grown p-type layer;
an opening through the epitaxially-grown p-type layer and the active region that exposes the n-type layer;
an n-contact formed in the opening to provide an electrically-conductive path to the GaN-containing substrate; and
a submount comprising;
a second substrate;
an insulating layer overlying the second substrate;
at least a first conductive lower mirror region and a second conductive lower mirror region overlying the insulating layer to provide separate electrical connection to the n-contact and p-contact;
a third mirror region overlying a gap between the first conductive lower mirror region and the second conductive lower mirror to provide a higher reflectivity than the submount;
a first metal containing composition in direct electrical contact with at least a portion of the first lower mirror region and in direct electrical contact with the p-contact, anda second metal containing composition in direct electrical contact with at least a portion of the second lower mirror region and in direct electrical contact with the n-contact.
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Accused Products
Abstract
High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.
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Citations
20 Claims
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1. A light emitting flip-chip on mirror apparatus comprising:
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an electrically-conductive n-doped bulk GaN-containing substrate; an epitaxially-grown n-type layer overlying the substrate; an epitaxially-grown active region overlying the epitaxially-grown n-type layer; an epitaxially-grown p-type layer overlying the epitaxially-grown active region; an p-contact overlying at least a portion of the epitaxially-grown p-type layer; an opening through the epitaxially-grown p-type layer and the active region that exposes the n-type layer; an n-contact formed in the opening to provide an electrically-conductive path to the GaN-containing substrate; and a submount comprising; a second substrate; an insulating layer overlying the second substrate; at least a first conductive lower mirror region and a second conductive lower mirror region overlying the insulating layer to provide separate electrical connection to the n-contact and p-contact; a third mirror region overlying a gap between the first conductive lower mirror region and the second conductive lower mirror to provide a higher reflectivity than the submount; a first metal containing composition in direct electrical contact with at least a portion of the first lower mirror region and in direct electrical contact with the p-contact, and a second metal containing composition in direct electrical contact with at least a portion of the second lower mirror region and in direct electrical contact with the n-contact. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A lighting system comprising:
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a base member configurable to provide an electrical connection to a power source; at least one light emitting diode die, electrically connected to the power source comprising; an electrically-conductive n-doped bulk GaN-containing substrate that is greater than or equal to 20 microns thick; an epitaxially-grown n-type layer overlying the substrate; an epitaxially-grown active region overlying the epitaxially-grown n-type layer; an epitaxially-grown p-type layer overlying the epitaxially-grown active region; an p-contact overlying at least a portion of the epitaxially-grown p-type layer; an opening through the epitaxially-grown p-type layer and the active region that exposes n-type material; an n-contact formed in the opening to provide an electrically-conductive path to the substrate; a submount comprising; and a second substrate; an insulating layer overlying the second substrate; at least a first conductive lower mirror region and a second conductive lower mirror region overlying the insulating layer to provide separate electrical connection to the n-contact and p-contact; a third mirror region overlying a gap between the first conductive lower mirror region and the second conductive lower mirror to provide a higher reflectivity than the submount; a first metal containing composition in direct electrical contact with at least a portion of the first lower mirror region and in direct electrical contact with the p-contact, and a second metal containing composition in direct electrical contact with at least a portion of the second lower mirror region and in direct electrical contact with the n-contact. - View Dependent Claims (19, 20)
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Specification