Reference layer for perpendicular magnetic anisotropy magnetic tunnel junction
First Claim
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1. An apparatus comprising:
- a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device including;
a storage layer contacting a tunneling layer; and
a reference layer including an equal number of magnetic layers and coupling layers, wherein a first coupling layer of the coupling layers is in contact with the tunneling layer, and wherein the magnetic layers and the coupling layers form a cobalt/iridium (Co/Ir) multilayer structure.
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Abstract
An apparatus includes a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device. The pMTJ device includes a storage layer and a reference layer. The reference layer includes a portion configured to produce a ferrimagnetic effect. The portion includes a first layer, a second layer, and a third layer. The second layer is configured to antiferromagnetically (AF) couple the first layer and the third layer during operation of the pMTJ device.
22 Citations
28 Claims
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1. An apparatus comprising:
a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device including; a storage layer contacting a tunneling layer; and a reference layer including an equal number of magnetic layers and coupling layers, wherein a first coupling layer of the coupling layers is in contact with the tunneling layer, and wherein the magnetic layers and the coupling layers form a cobalt/iridium (Co/Ir) multilayer structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method comprising:
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biasing a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device to generate a magnetic state at the pMTJ device; and initiating a sense operation to determine the magnetic state using a reference layer of the pMTJ device, the reference layer comprising a portion that produces a ferrimagnetic effect and that includes a coupling layer adjacent to a tunneling layer in contact with a storage layer, the portion comprising magnetic layers and coupling layers, the magnetic layers comprising cobalt (Co) and the coupling layers comprising iridium (Ir). - View Dependent Claims (12, 13, 14, 15, 16)
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17. An apparatus comprising:
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means for enabling a tunnel magnetoresistance (TMR) effect at a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device; means for generating a configurable magnetic state of the pMTJ device, the means for generating the configurable magnetic state in contact with the means for enabling; and means for generating a reference magnetic state of the pMTJ device, the means for generating the reference magnetic state comprising; means for antiferromagnetically (AF) coupling magnetic layers of the pMTJ device, the means for AF coupling contacting the means for enabling, and means for generating a magnetic field at the pMTJ device, the means for generating the magnetic field including magnetic layers, and the means for AF coupling including coupling layers, the magnetic layers comprising cobalt (Co) and the coupling layers comprise iridium (Ir). - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A computer-readable medium storing instructions that are executable by a processor, the computer-readable medium comprising a perpendicular magnetic anisotropy magnetic tunnel junction (pMTJ) device comprising:
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a storage layer contacting a tunneling layer; and a reference layer including an equal number of magnetic layers and coupling layers, wherein a first coupling layer of the coupling layers is in contact with the tunneling layer, and wherein the magnetic layers and the coupling layers form a first cobalt/iridium (Co/Ir) multilayer structure. - View Dependent Claims (26, 27, 28)
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Specification