Rapid transition schmitt trigger circuit
First Claim
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1. A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process, comprising:
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit;
wherein, the PMOS/NMOS body control circuit comprises a plurality transistors connected such that, through turning on and off the plurality of transistors thereby changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enables different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels;
wherein the PMOS/NMOS body control circuit is further configured to, through controlling voltages of body regions of the first NMOS transistor and the first PMOS transistor, enable the different flip-flop threshold voltages for the input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels; and
wherein the PMOS/NMOS body control circuit is further configured to;
if an input of the Schmitt trigger circuit is at a low electrical level, set a voltage of the body region of the first NMOS transistor to 0, and set a voltage of the body region of the first PMOS transistor to VD1;
if the input of the Schmitt trigger circuit is at a high electrical level, set the voltage of the body region of the first NMOS transistor to VD2, and set the voltage of the body region of the first PMOS transistor to VDD;
wherein, VDD represents a power supply voltage, VD1 represents a low voltage outputted by a first output end of the PMOS/NMOS body control circuit, said first output end is connected to the body region of the first PMOS transistor;
VD2 represents a high voltage outputted by a second output end of the PMOS/NMOS transistor body control circuit, said second output end is connected to the body region of the first NMOS transistor.
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Abstract
A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process includes: a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit; wherein, the PMOS/NMOS body control circuit is configured to, through changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enable different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels.
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Citations
14 Claims
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1. A small-sized rapid transition Schmitt trigger circuit for use with a silicon-on-insulator process, comprising:
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit;
wherein, the PMOS/NMOS body control circuit comprises a plurality transistors connected such that, through turning on and off the plurality of transistors thereby changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enables different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels;wherein the PMOS/NMOS body control circuit is further configured to, through controlling voltages of body regions of the first NMOS transistor and the first PMOS transistor, enable the different flip-flop threshold voltages for the input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels; and wherein the PMOS/NMOS body control circuit is further configured to;
if an input of the Schmitt trigger circuit is at a low electrical level, set a voltage of the body region of the first NMOS transistor to 0, and set a voltage of the body region of the first PMOS transistor to VD1;
if the input of the Schmitt trigger circuit is at a high electrical level, set the voltage of the body region of the first NMOS transistor to VD2, and set the voltage of the body region of the first PMOS transistor to VDD;
wherein, VDD represents a power supply voltage, VD1 represents a low voltage outputted by a first output end of the PMOS/NMOS body control circuit, said first output end is connected to the body region of the first PMOS transistor;
VD2 represents a high voltage outputted by a second output end of the PMOS/NMOS transistor body control circuit, said second output end is connected to the body region of the first NMOS transistor. - View Dependent Claims (2, 3, 4, 5)
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit;
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6. An silicon-on-insulator-based integrated circuit comprising one or more waveform shaping circuits including a rapid transition Schmitt trigger circuit, the Schmitt trigger circuit including:
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit;
wherein, the PMOS/NMOS body control circuit comprises a plurality transistors connected such that, through turning on and off the plurality of transistors thereby changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enables different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels;wherein the PMOS/NMOS body control circuit is further configured to, through controlling voltages of body regions of the first NMOS transistor and the first PMOS transistor, enable the different flip-flop threshold voltages for the input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels; and wherein the PMOS/NMOS body control circuit is further configured to;
if an input of the Schmitt trigger circuit is at a low electrical level, set a voltage of the body region of the first NMOS transistor to 0, and set a voltage of the body region of the first PMOS transistor to VD1;
if the input of the Schmitt trigger circuit is at a high electrical level, set the voltage of the body region of the first NMOS transistor to VD2, and set the voltage of the body region of the first PMOS transistor to VDD;
wherein, VDD represents a power supply voltage, VD1 represents a low voltage outputted by a first output end of the PMOS/NMOS body control circuit, said first output end is connected to the body region of the first PMOS transistor;
VD2 represents a high voltage outputted by a second output end of the PMOS/NMOS transistor body control circuit, said second output end is connected to the body region of the first NMOS transistor. - View Dependent Claims (7, 8, 9, 10)
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit;
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11. A method of realizing, in a silicon-on-insulator-based integrated circuit, a rapid transition with a Schmitt trigger circuit, wherein the Schmitt trigger circuit includes:
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit comprising a plurality of inter-connected transistors electrically coupled with the first NMOS transistor and the first PMOS transistor;
the method comprising;
configuring the PMOS/NMOS body control circuit to, through turning on and off the plurality of transistors thereby changing threshold voltages of the first NMOS transistor and the first PMOS transistor, enable different flip-flop threshold voltages for input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels;wherein the PMOS/NMOS body control circuit is further configured to, through controlling voltages of body regions of the first NMOS transistor and the first PMOS transistor, enable the different flip-flop threshold voltages for the input transitions from high electrical levels to low electrical levels and from low electrical levels to high electrical levels; and wherein the PMOS/NMOS body control circuit is further configured to;
if an input of the Schmitt trigger circuit is at a low electrical level, set a voltage of the body region of the first NMOS transistor to 0, and set a voltage of the body region of the first PMOS transistor to VD1;
if the input of the Schmitt trigger circuit is at a high electrical level, set the voltage of the body region of the first NMOS transistor to VD2, and set the voltage of the body region of the first PMOS transistor to VDD;
wherein, VDD represents a power supply voltage, VD1 represents a low voltage outputted by a first output end of the PMOS/NMOS body control circuit, said first output end is connected to the body region of the first PMOS transistor;
VD2 represents a high voltage outputted by a second output end of the PMOS/NMOS transistor body control circuit, said second output end is connected to the body region of the first NMOS transistor. - View Dependent Claims (12, 13, 14)
- a first NMOS transistor, a first PMOS transistor, a second NMOS transistor, a second PMOS transistor, and a PMOS/NMOS body control circuit comprising a plurality of inter-connected transistors electrically coupled with the first NMOS transistor and the first PMOS transistor;
Specification