Multi-die MEMS package

• US 9,586,813 B2
• Filed: 07/21/2015
• Issued: 03/07/2017
• Est. Priority Date: 09/18/2010
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Bryzek, Janusz, Bloomsburgh, John Gardner, Acar, Cenk
• Primary Examiner(s): Dulka, John P
• Assistant Examiner(s): Sylvia, Christina
• Application Number:
  US14/804,691
• Publication Number:
  US 20150321904A1
• Time in Patent Office: 595 Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 7/008 MEMS characterised by an electronic circuit specially adapted for controlling or driving the same B81B7/0087 takes precedence; arrangements for starting, regulating, braking, or otherwise controlling an actuator H02N; control arrangements or circuits for visual indicators G09G3/00
• CPC Class Codes: B81C 1/0023 Packaging together an electronic processing unit die and a micromechanical structure die MEMS packages B81B7/0032; MEMS packaging processes B81C1/00261
• CPC Class Codes: H01L 2224/131 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/1461 MEMS
• CPC Class Codes: H05K 1/18 Printed circuits structurally associated with non-printed electric components H05K1/0201, H05K1/023, H05K1/0243, and H05K1/16 take precedence

Abstract

This document refers to multi-die micromechanical system (MEMS) packages. In an example, a multi-die MEMS package can include a controller integrated circuit (IC) configured to couple to a circuit board, a MEMS IC mounted to a first side of the controller IC, a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side, and wherein the MEMS IC is coupled to the through silicon via.

Claims

1. An apparatus comprising:

a controller integrated circuit (IC) configured to couple to a circuit board;

a via layer mounted to a first side of the controller IC;

a device layer having multiple moveable portions and a single anchor, the device layer configured to allow in-plane movement and out-of-plane movement of one or more of the moveable portions, and the single anchor configured to support the multiple moveable portions; and

wherein the via layer is coupled to the device layer at a perimeter of the device layer and at the anchor, the via layer including electrically isolated regions configured to provide electrodes for out-of-plane movement of one or more of the multiple moveable portions.

2. The apparatus of claim 1, including a plurality of solder interconnects coupled to the circuit board and the control IC.

3. The apparatus of claim 1, wherein the apparatus includes an inertial sensor.

4. The apparatus of claim 3, wherein the inertial sensor includes an inertial sensor having six degrees of freedom.

5. The apparatus of claim 1, including

a cap layer couple to the device layer opposite the controller IC.

6. The apparatus of claim 5, wherein the device layer is coupled directly to the controller IC at a perimeter of the device layer and at the single anchor.

7. The apparatus of claim 1, wherein the controller IC includes an application specific IC (ASIC).

8. The apparatus of claim 1, including a high voltage controller IC configured to supply voltage to drive the device layer into resonance.

9. The apparatus of claim 8, wherein the high voltage controller IC is mounted to the controller IC.

10. The apparatus of claim 8, wherein the controller IC includes a first application specific IC (ASIC);

and

wherein the high voltage controller IC includes a second ASIC.

12. The apparatus of claim 8, wherein the high voltage controller IC is mounted to the controller IC.

13. The apparatus of claim 8, wherein the controller IC includes a first application specific IC (ASIC);

and

wherein the high voltage controller IC includes a second ASIC.

11. An apparatus comprising:

a controller integrated circuit (IC) configured to couple to a circuit board;

a microelectromechanical system (MEMS) IC mounted to a first side of the controller IC;

a through silicon via extending through the controller IC between the first side and a second side of the controller IC, the second side opposite the first side;

wherein the MEMS IC is coupled to the through silicon via; and

a high voltage controller IC configured to supply voltage to drive the MEMS IC into resonance.

14. The apparatus of claim 11, wherein the MEMS IC includes an inertial sensor.

15. The apparatus of claim 14, wherein the inertial sensor includes an inertial sensor having six degrees of freedom.

16. The apparatus of claim 11, wherein the MEMS IC includes:

a device layer having multiple moveable portions and a single anchor, the device layer configured to allow in-plane movement and out-of-plane movement of one or more of the moveable portions, and the single anchor configured to support the multiple moveable portions; and

a cap layer couple to the device layer opposite the controller IC.

17. The apparatus of claim 16, wherein the inertial sensor includes a via layer coupled to the device layer at a perimeter of the device layer and at the anchor, the via layer including electrically isolated regions configured to provide out-of-plane electrodes of the inertial sensor.

18. The apparatus of claim 16, wherein the device layer is coupled directly to the controller IC at a perimeter of the device layer and at the single anchor.

19. The apparatus of claim 11, wherein the controller IC includes an application specific IC (ASIC).