Micro-electromechanical apparatus with multiple chambers and method for manufacturing the same

• US 9,586,815 B2
• Filed: 01/05/2015
• Issued: 03/07/2017
• Est. Priority Date: 11/13/2014
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Su, Chung-Yuan, Kuo, Chin-Fu, Lee, Tzung-Ching, Huang, Chao-Ta
• Primary Examiner(s): Ahmad, Khaja
• Application Number:
  US14/588,983
• Publication Number:
  US 20160137491A1
• Time in Patent Office: 792 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2203/0127 Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
• CPC Class Codes: B81B 2203/04 Electrodes
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate

Abstract

A micro-electromechanical apparatus with multiple chambers and a method for manufacturing the same are provided, wherein various micro-electromechanical sensors are integrated into a single apparatus. For example, the micro-electromechanical apparatus in this disclosure may have two independent hermetically sealed chambers with different pressures, such that a micro-electromechanical barometer and a micro-electromechanical accelerometer can be operated in an optimal pressure circumstance.

Claims

1. A micro-electromechanical apparatus, being adapted to measuring a pressure and an inertial physical quantity, the micro-electromechanical apparatus comprising:

a substrate, having a first surface;

a first cover, disposed on the substrate and having a top wall and a side wall, wherein the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate so the first cover and the substrate define a first hermetically sealed chamber;

a sensing unit, comprising a movable mass suspended over the substrate; and

a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber, wherein the first cover covers a lateral portion and an upper surface of the movable mass, the side wall of the first cover surrounds the movable mass, and the sensing unit is enclosed by the first hermetically sealed chamber and is disposed outside the second hermetically sealed chamber.

2. The micro-electromechanical apparatus of claim 1, wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber.

3. The micro-electromechanical apparatus of claim 2, wherein a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover.

4. The micro-electromechanical apparatus of claim 3, wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film directly covers the through hole to communicates with the exterior gas via the through hole.

5. The micro-electromechanical apparatus of claim 4, wherein the substrate further comprises:

a semiconductor layer, disposed on the first surface;

a first electrical insulation layer, covering the semiconductor layer;

an electrical conductive layer, disposed on the first electrical insulation layer;

a second electrical insulation layer, covering the electrical conductive layer; and

a stationary electrode, disposed on the second electrical insulation layer.

6. The micro-electromechanical apparatus of claim 5, wherein the film comprises:

a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber;

a portion of the semiconductor layer, covering the through hole; and

a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer.

7. The micro-electromechanical apparatus of claim 6, wherein a material of the stationary electrode comprises copper, and a material of the electrical conductive layer comprises poly-silicon.

8. The micro-electromechanical apparatus of claim 4, wherein the second cover, the film and the second hermetically sealed chamber are adapted to measuring a gas pressure.

9. The micro-electromechanical apparatus of claim 1, wherein the sensing unit comprises at least one of an accelerometer, a gyroscope, and an oscillator.

10. A micro-electromechanical apparatus, comprising:

a substrate, having a first surface;

a first cover, disposed on the substrate and having a top wall and a side wall, wherein the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate so the first cover and the substrate define a first hermetically sealed chamber; and

a sensing unit, comprising a movable mass suspended over the substrate;

a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber,

wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, and a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber.

11. The micro-electromechanical apparatus of claim 10, wherein a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover.

12. The micro-electromechanical apparatus of claim 11, wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film directly covers the through hole to communicates with the exterior gas via the through hole.

13. The micro-electromechanical apparatus of claim 12, wherein the substrate further comprises:

a semiconductor layer, disposed on the first surface;

a first electrical insulation layer, covering the semiconductor layer;

an electrical conductive layer, disposed on the first electrical insulation layer;

a second electrical insulation layer, covering the electrical conductive layer; and

a stationary electrode, disposed on the second electrical insulation layer.

14. The micro-electromechanical apparatus of claim 13, wherein the film comprises:

a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber;

a portion of the semiconductor layer, covering the through hole; and

a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer.

15. A micro-electromechanical apparatus, comprising:

a substrate, having a first surface;

a first cover, disposed on the substrate and having a top wall and a side wall, wherein the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate so the first cover and the substrate define a first hermetically sealed chamber;

a sensing unit, comprising a movable mass suspended over the substrate; and

a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber,

wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover.

16. The micro-electromechanical apparatus of claim 15, wherein the substrate further comprises a film and a through hole, an upper surface of the film is electrical conductive and exposed in the second hermetically sealed chamber, and a lower surface of the film directly covers the through hole to communicates with the exterior gas via the through hole.

17. The micro-electromechanical apparatus of claim 16, wherein the substrate further comprises:

a semiconductor layer, disposed on the first surface;

a first electrical insulation layer, covering the semiconductor layer;

an electrical conductive layer, disposed on the first electrical insulation layer;

a second electrical insulation layer, covering the electrical conductive layer; and

a stationary electrode, disposed on the second electrical insulation layer.

18. The micro-electromechanical apparatus of claim 17, wherein the film comprises:

a portion of the electrical conductive layer, exposed in the second hermetically sealed chamber;

a portion of the semiconductor layer, covering the through hole; and

a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer.

19. A micro-electromechanical apparatus, comprising:

a substrate, having a first surface, comprising;

a film; and

a through hole;

a first cover, disposed on the substrate and having a top wall and a side wall, wherein the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate so the first cover and the substrate define a first hermetically sealed chamber;

a sensing unit, comprising a movable mass suspended over the substrate; and

a second cover, disposed on the substrate, wherein the second cover and the substrate define a second hermetically sealed chamber,

wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, an upper surface of the film is exposed in the second hermetically sealed chamber, and a lower surface of the film covers the through hole.

20. The micro-electromechanical apparatus of claim 19, wherein the substrate further comprises:

a semiconductor layer, disposed on the first surface;

a first electrical insulation layer, covering the semiconductor layer;

an electrical conductive layer, disposed on the first electrical insulation layer;

a second electrical insulation layer, covering the electrical conductive layer; and

a stationary electrode, disposed on the second electrical insulation layer.

21. The micro-electromechanical apparatus of claim 20, wherein the film comprises:

a portion of the electrical conductive layer, exposed in the second hennetically sealed chamber;

a portion of the semiconductor layer, covering the through hole; and

a portion of the first electrical insulation layer, disposed between the portion of the electrical conductive layer and the portion of the semiconductor layer.

22. The micro-electromechanical apparatus of claim 19, wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber.

23. A method for manufacturing a micro-electromechanical apparatus, the method comprising:

forming a stationary electrode on a first substrate;

etching a second substrate to form a plurality of protrusions and a plurality of recesses;

bonding he second substrate to the first substrate to form a second hermetically sealed chamber;

etching the second substrate to form a sensing unit and a second cover covering the second hermetically sealed chamber, wherein the sensing unit comprises at least one movable mass suspended over the stationary electrode; and

bonding a first cover to a first surface of the first substrate to form a first hermetically sealed chamber, wherein the first cover has a top wall and a side wall, the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate, and wherein the first cover covers a lateral portion and an upper surface of the movable mass, and the side wall of the first cover surrounds the movable mass,

wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, and the sensing unit is disposed outside the second hermetically sealed chamber.

24. The method of claim 23, wherein forming the second cover and the movable mass comprises:

making a distance from a lower surface of the movable mass to the first surface be substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and making a thickness of the movable mass be substantially equal to a thickness of the second cover.

25. The method of claim 23, wherein providing the first substrate comprises:

forming a film and a through hole on the first substrate, wherein the through hole penetrates the first substrate, and the film covers the through hole.

26. The method of claim 25, wherein forming the film comprises:

forming a P-type semiconductor layer on the first surface of the first substrate;

forming a first electrical insulation layer on the P-type semiconductor layer;

forming an electrical conductive layer on the first electrical insulation layer;

forming a second electrical insulation layer on the electrical conductive layer, wherein the second electrical insulation layer covers the first electrical insulation layer and the electrical conductive layer; and

patterning the second electrical insulation layer to have a portion of the electrical conductive layer exposed in the second hermetically sealed chamber.

27. The method of claim 26, wherein forming the stationary electrode comprises:

forming an electrode material layer on the patterned second electrical insulation layer; and

patterning the electrode material layer to form the stationary electrode.

28. The method of claim 23, wherein the second substrate comprises a device layer, a handle layer and an electrical insulation layer disposed between the device layer and the handle layer, and the method further comprises:

etching the device layer to form the protrusions and the recesses; and

forming an electrical conductive bonding layer on the protrusions.

29. The method of claim 28, wherein bonding the second substrate to the first substrate comprises:

disposing the device layer of the second substrate to face the first substrate, and connecting the electrical conductive bonding layer to a plurality of electrical conductive bonding portions on the first substrate.

30. The method of claim 29, further comprising:

removing the handle layer and the electrical insulation layer of the second substrate after bonding the second substrate to the first surface of the first substrate.

31. The method of claim 30, wherein forming the second cover and the sensing unit comprises etching the device layer of the second substrate.

32. A method for manufacturing a micro-electromechanical apparatus adapted to measure a pressure and an inertial physical quantity, the method comprising:

forming a stationary electrode on a first substrate;

etching a second substrate to form a plurality of protrusions and a plurality of recesses;

bonding the second substrate to the first substrate to form a second hermetically sealed chamber;

etching the second substrate to form a sensing unit and a second cover covering the second hermetically sealed chamber, wherein the sensing unit comprises at least one movable mass suspended over the stationary electrode; and

bonding a first cover to a first surface of the first substrate to form a first hermetically sealed chamber, wherein the first cover has a top wall and a side wall, the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate, and wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover,

wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber, the sensing unit is enclosed by the first hermetically sealed chamber, and the sensing unit is disposed outside the second hermetically sealed chamber.

33. A method for manufacturing a micro-electromechanical apparatus, the method comprising:

forming a stationary electrode on a first substrate;

etching a second substrate to form a plurality of protrusions and a plurality of recesses;

bonding the second substrate to the first substrate to form a second hermetically sealed chamber;

etching the second substrate to form a sensing unit and a second cover covering the second hermetically sealed chamber, wherein the sensing unit comprises at least one movable mass suspended over the stationary electrode; and

bonding a first cover to a first surface of the first substrate to form a first hermetically sealed chamber, wherein the first cover has a top wall and a side wall, the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate, and wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover,

wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, a distance from a lower surface of the movable mass to the first surface is substantially equal to a distance from a lower surface of a top wall of the second cover to the first surface, and a thickness of the movable mass is substantially equal to a thickness of the second cover.

34. A method for manufacturing a micro-electromechanical apparatus, the method comprising:

forming a stationary electrode on a first substrate, wherein the first substrate comprises a film and a through hole;

etching a second substrate to form a plurality of protrusions and a plurality of recesses;

bonding the second substrate to the first substrate to form a second hermetically sealed chamber;

etching the second substrate to form a sensing unit and a second cover covering the second hermetically sealed chamber, wherein the sensing unit comprises at least one movable mass suspended over the stationary electrode; and

bonding a first cover to a first surface of the first substrate to form a first hermetically sealed chamber, wherein the first cover has a top wall and a side wall, the top wall and the side wall of the first cover are integrally formed, and the side wall of the first cover is connected to the substrate, and wherein the first cover covers a lateral portion and an upper surface of the movable mass and the first cover covers a lateral portion and an upper surface of the second cover, the side wall of the first cover surrounds the movable mass and the second cover,

wherein a gas pressure of the first hermetically sealed chamber is different from a gas pressure of the second hermetically sealed chamber, the sensing unit and the second cover are enclosed by the first hermetically sealed chamber, the sensing unit is disposed outside the second hermetically sealed chamber, an upper surface of the film is exposed in the second hermetically sealed chamber, and a lower surface of the film covers the through hole.