Enhanced deposition of noble metals
First Claim
1. A method for depositing a nitride, carbide or alloy thin film comprising one or more noble metals on a substrate, the method comprising a deposition cycle comprising, in order:
- contacting the substrate with a first vapor phase metal reactant comprising a first metal, wherein the vapor phase metal reactant does not comprise a noble metal, such that first reactant species adsorb on the substrate surface;
removing excess first vapor phase metal reactant;
contacting the substrate with a second vapor phase noble-metal reactant comprising a second metal that is a noble metal, such that the second reactant reacts with adsorbed first reactant species on the substrate; and
removing excess second noble-metal reactant,wherein the deposition cycle forms a monolayer of a nitride, carbide or alloy compound comprising the first metal and second metal and is repeated to form the thin film.
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Abstract
The invention relates generally to processes for enhancing the deposition of noble metal thin films on a substrate by atomic layer deposition. Treatment with gaseous halides or metalorganic compounds reduces the incubation time for deposition of noble metals on particular surfaces. The methods may be utilized to facilitate selective deposition. For example, selective deposition of noble metals on high-k materials relative to insulators can be enhanced by pretreatment with halide reactants. In addition, halide treatment can be used to avoid deposition on the quartz walls of the reaction chamber.
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Citations
18 Claims
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1. A method for depositing a nitride, carbide or alloy thin film comprising one or more noble metals on a substrate, the method comprising a deposition cycle comprising, in order:
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contacting the substrate with a first vapor phase metal reactant comprising a first metal, wherein the vapor phase metal reactant does not comprise a noble metal, such that first reactant species adsorb on the substrate surface; removing excess first vapor phase metal reactant; contacting the substrate with a second vapor phase noble-metal reactant comprising a second metal that is a noble metal, such that the second reactant reacts with adsorbed first reactant species on the substrate; and removing excess second noble-metal reactant, wherein the deposition cycle forms a monolayer of a nitride, carbide or alloy compound comprising the first metal and second metal and is repeated to form the thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An atomic layer deposition process for depositing a film comprising a noble metal compound on a substrate in a reaction chamber comprising multiple deposition cycles, at least one deposition cycle comprising alternately and sequentially contacting the substrate with vapor phase pulses of three reactants:
- a first reactant comprising a first metal that is not a noble metal, a second reactant comprising a second metal that is a noble metal and a third reactant comprising nitrogen or carbon,
wherein the at least one deposition cycle forms a monolayer of a compound comprising the first metal and the second metal. - View Dependent Claims (16, 17, 18)
- a first reactant comprising a first metal that is not a noble metal, a second reactant comprising a second metal that is a noble metal and a third reactant comprising nitrogen or carbon,
Specification