High quality group-III metal nitride crystals, methods of making, and methods of use
First Claim
Patent Images
1. A group III metal nitride crystal made from a process comprising:
- depositing at least one patterned mask layer on a substrate to form a patterned substrate, said mask layer comprising at least an inert layer comprising one or more of Au, Ag, Pt, Pd, Rh, Ru, Ir, Ni, Cr, V, Ti, or Ta, said inert layer being adhered to said substrate;
placing said patterned substrate within a sealable container along with a group III metal source, at least one mineralizer composition, and a nitrogen containing solvent; and
forming an ammonothermal group III metal nitride layer having one or more coalescence fronts on the patterned substrate by heating said sealable container, wherein said one or more coalescence fronts comprise a pattern of locally-approximately-linear arrays of threading dislocations, said threading dislocations having a concentration between about 5 cm−
1 and about 105 cm−
1, said pattern having;
at least one pitch dimension between about 5 micrometers and about 20 millimeters; and
regions between said locally-approximately-linear arrays of threading dislocations having a threading dislocation density below about 105 cm−
2 and a stacking-fault concentration below about 103 cm−
1.
7 Assignments
0 Petitions
Accused Products
Abstract
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.
182 Citations
32 Claims
-
1. A group III metal nitride crystal made from a process comprising:
-
depositing at least one patterned mask layer on a substrate to form a patterned substrate, said mask layer comprising at least an inert layer comprising one or more of Au, Ag, Pt, Pd, Rh, Ru, Ir, Ni, Cr, V, Ti, or Ta, said inert layer being adhered to said substrate; placing said patterned substrate within a sealable container along with a group III metal source, at least one mineralizer composition, and a nitrogen containing solvent; and forming an ammonothermal group III metal nitride layer having one or more coalescence fronts on the patterned substrate by heating said sealable container, wherein said one or more coalescence fronts comprise a pattern of locally-approximately-linear arrays of threading dislocations, said threading dislocations having a concentration between about 5 cm−
1 and about 105 cm−
1, said pattern having;at least one pitch dimension between about 5 micrometers and about 20 millimeters; and regions between said locally-approximately-linear arrays of threading dislocations having a threading dislocation density below about 105 cm−
2 and a stacking-fault concentration below about 103 cm−
1. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
-
-
13. A wafer formed from a bulk crystal grown on a seed crystal derived from a group III metal nitride crystal made from a process comprising:
-
depositing at least one patterned mask layer on a substrate to form a patterned substrate, said mask layer comprising at least an inert layer comprising one or more of Au, Ag, Pt, Pd, Rh, Ru, Ir, Ni, Cr, V, Ti, or Ta, said inert layer being adhered to said substrate; placing said patterned substrate within a sealable container along with a group III metal source, at least one mineralizer composition, and a nitrogen containing solvent; and forming an ammonothermal group III metal nitride layer having one or more coalescence fronts on the patterned substrate by heating said sealable container;
wherein said wafer is a free-standing ammonothermal group III metal nitride crystal, wherein the crystal is characterized by a wurtzite crystal structure, and comprises at least;a group III metal selected from gallium, aluminum, indium, and a combination of any of the foregoing, and nitrogen; and a first large-area surface having a maximum dimension greater than about 10 millimeters, wherein the first large-area surface is characterized by, a symmetric x-ray rocking curve full width at half maximum less than about 200 arcsec; an impurity concentration of H greater than about 1017 cm−
3;and an impurity concentration greater than about 1015 cm−
3 of at least one of Li, Na, K, F, Cl, Br, I, as quantified by calibrated secondary ion mass spectrometry, wherein the first large-area surface comprises a pattern of locally-approximately-linear arrays of threading dislocations having a concentration between about 5 cm−
1 and about 105 cm−
1, and wherein the pattern is characterized by,at least one pitch dimension between about 5 micrometers and about 20 millimeters; and regions between said locally-approximately-linear arrays of threading dislocations having a threading dislocation density below about 105 cm−
2 and a stacking-fault concentration below about 103 cm−
1. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
-
-
31. A wafer from a bulk crystal grown on a seed crystal derived from a group III metal nitride crystal made from a process comprising:
-
depositing at least one patterned mask layer on a substrate to form a patterned substrate, said mask layer comprising at least an inert layer comprising one or more of Au, Ag, Pt, Pd, Rh, Ru, Ir, Ni, Cr, V, Ti, or Ta, said inert layer being adhered to said substrate; placing said patterned substrate within a sealable container along with a group III metal source, at least one mineralizer composition, and a nitrogen containing solvent; and forming an ammonothermal group III metal nitride layer having one or more coalescence fronts on the patterned substrate by heating said sealable container;
wherein said wafer is a free-standing ammonothermal group III metal nitride crystal, wherein said crystal is a wurtzite crystal structure and comprises at least;a group III metal selected from gallium, aluminum, indium, and a combination of any of the foregoing; and
nitrogen; anda first large-area surface having a maximum dimension greater than about 10 millimeters; wherein the first large-area surface is characterized by; a symmetric x-ray rocking curve full width at half maximum less than about 200 arcsec, an impurity concentration of H greater than about 1017 cm−
, andan impurity concentration greater than about 1015 cm−
3 of at least one of Li, Na, K, F, CI, Br, and I, as quantified by calibrated secondary ion mass spectrometry;
wherein the first large-area surface comprises regions in which the concentration of threading dislocations varies periodically by at least a factor of two in at least one direction, wherein a period of the variation is between about 5 micrometers and about 20 millimeters. - View Dependent Claims (32)
-
Specification