High selectivity and low stress carbon hardmask by pulsed low frequency RF power

• US 9,589,799 B2
• Filed: 04/08/2014
• Issued: 03/07/2017
• Est. Priority Date: 09/30/2013
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Reddy, Sirish K., Ji, Chunhai, Chen, Xinyi, Subramonium, Pramod
• Primary Examiner(s): Lee, Cheung
• Application Number:
  US14/248,046
• Publication Number:
  US 20150093908A1
• Time in Patent Office: 1,064 Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/505 using radio frequency discharges
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01L 21/02115 the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials

Abstract

Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments, the methods involve pulsing low frequency radio frequency power while keeping high frequency radio frequency power constant during deposition of the ashable hard mask using a dual radio frequency plasma source. According to various embodiments, the low frequency radio frequency power can be pulsed between non-zero levels or by switching the power on and off. The resulting deposited highly selective ashable hard mask may have decreased stress due to one or more factors including decreased ion and atom impinging on the ashable hard mask and lower levels of hydrogen trapped in the ashable hard mask.

Claims

1. A method of forming an ashable hard mask, comprising:

exposing a semiconductor substrate to a process gas comprising a hydrocarbon precursor gas to

deposit an ashable hard mask on the substrate by a plasma enhanced chemical vapor deposition (PECVD) process;

igniting a plasma generated by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component; and

pulsing LF power while HF power is constant during deposition,

wherein the hydrocarbon precursor gas has a chemical formula of C_xH_y, where x is an integer between 2 and 10 and y is an integer between 2 and 24.

2. The method of claim 1, wherein the LF power is pulsed between non-zero power levels.

3. The method of claim 1, wherein the LF power is pulsed by switching the LF power on and off.

4. The method of claim 1, wherein the ashable hard mask is an amorphous carbon layer.

5. The method of forming an amorphous carbon layer, comprising:

exposing a semiconductor substrate to a process gas comprising a hydrocarbon precursor gas;

depositing on the substrate an amorphous carbon layer by a plasms enhanced chemical vapor deposition (PECVD) process using a plasma generated by a dual radio frequency (RF) plasma source including a high frequency (HF) component and a low frequency (LF) component,

wherein HF power is constant while LF power is pulsed during deposition, and

wherein the hydrocarbon precursor gas has a chemical formula of C_xH_y, where x is an integer between 2 and 10 and y is an integer between 2 and 24.

6. The method of claim 5, wherein frequency of LF RF power is about 400 kHz.

7. The method of claim 5, wherein the LF power is pulsed at a frequency of between about 2 Hz and about 200 Hz.

8. The method of claim 7, wherein the LF power is pulsed at a frequency of between about 2 Hz and about 10 Hz.

9. The method of claim 5, wherein the depositedamorphous carbon layer has a modulus to stress ratio of 1.

10. The method of claim 5, wherein the deposited amorphous carbon layer has an etch selectivity between about 3.6 and 4.4 to an oxide, nitride or polysilicon layer.

11. A method of claim 5, wherein the deposited amorphous carbon layer has a hydrogen content of less than about 15%.

12. The method of claim 5, wherein the amorphous carbon layer is deposited at a process temperature between about 275°

C. and 550°

C.

13. The method of claim 5, wherein the LF power is pulsed between non-zero power levels.

14. The method of claim 5, wherein the LF power is pulsed by switching the LF power on and off.

15. The method of claim 5, wherein the bonding structure of the amorphous carbon layer includes sp², sp³, and combinations thereof.

16. The method of claim 5, wherein the amorphous carbon layer is an ashable hard mask.

17. The method of claim 5, wherein the amorphous carbon layer comprises carbon, hydrogen, and a trace amount of one or more dopants selected from the group consiting of nitrogen, fluorine, boron, and silicon.