Radiation-emitting semiconductor chip

• US 9,590,008 B2
• Filed: 05/04/2015
• Issued: 03/07/2017
• Est. Priority Date: 11/28/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Moosburger, Jrgen, von Malm, Norwin, Rode, Patrick, Hppel, Lutz, Engl, Karl
• Primary Examiner(s): HALL, VICTORIA KATHLEEN
• Application Number:
  US14/702,807
• Publication Number:
  US 20150236070A1
• Time in Patent Office: 673 Days
• Field of Search: 257/99, 257/773, 257/774, 257/776, 257/E33.044, 257/79, 257/E33.001, 257/E33.005, 257/E33.006, 257/E33.011, 257/E33.055, 257E33062-E33066, 257/E23.01, 257/E23.141, 257/E23.142, 257/E23.151, 257/E23.169, 257/E23.175, 257/E23.002, 438/22, 438/26, 438/28
• US Class Current: 1/1
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 27/15 including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A radiation-emitting semiconductor chip includes a carrier and a semiconductor body having a semiconductor layer sequence, wherein an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence; the semiconductor layer sequence includes an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer; the first semiconductor layer is arranged on a side of the active region facing away from the carrier; the emission region has a recess extending through the active region; the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier; the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer.

Claims

1. A radiation-emitting semiconductor chip comprising a carrier and a semiconductor body having a semiconductor layer sequence, wherein

an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence;

the semiconductor layer sequence comprises an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer;

the first semiconductor layer is arranged on a side of the active region facing away from the carrier;

the emission region has a recess extending through the active region;

the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier;

the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer, the second connection layer running in regions between the emission region and the first connection layer;

the first connection layer, in the protective diode region, electrically conductively connects to the second semiconductor layer; and

the protective diode region has a further recess, wherein the second connection layer extends from the first semiconductor layer in the further recess toward the carrier.

2. The semiconductor chip according to claim 1, wherein the emission region and the protective diode region are connected in antiparallel with one another with regard to their forward direction.

3. The semiconductor chip according to claim 1, wherein the emission region and the protective diode region are regions of the semiconductor body arranged alongside one another in a lateral direction.

4. The semiconductor chip according to claim 1, wherein the semiconductor body cohesively connects to the carrier, and the first connection layer runs in regions between the semiconductor body and the carrier.

5. The semiconductor chip according to claim 1, wherein the second connection layer in the protective diode region electrically conductively connects to the first semiconductor layer.

6. The semiconductor chip according to claim 1, wherein the semiconductor chip has a contact provided for external contact-connection of the second connection layer.

7. The semiconductor chip according to claim 6, wherein the contact and the protective diode region are arranged alongside one another in a plan view of the semiconductor chip.

8. The semiconductor chip according to claim 1, wherein, in the protective diode region, an insulation layer is arranged in regions between the second semiconductor layer and the first connection layer.

9. The semiconductor chip according to claim 8, wherein the insulation layer has a cutout and, in the protective diode region, the first connection layer electrically connects to the second semiconductor layer through the cutout.

10. The semiconductor chip according to claim 8, wherein the insulation layer extends beyond the protective diode region in a plan view of the semiconductor chip at least in regions.

11. The semiconductor chip according to claim 8, wherein the insulation layer covers side areas of the further recess.

12. The semiconductor chip according to claim 1, further comprising a first contact and a second contact for an external electrical contact connection, wherein the first contact electrically conductively connects to the first connection layer and the second contact electrically conductively connects to the second connection layer and at least one of the first contact and the second contact are on a side of the carrier facing away from the semiconductor body.

13. The radiation-emitting semiconductor chip according to claim 1, comprises a first contact and a second contact for an external electrical contact connection, wherein the first contact is arranged on a side of the carrier facing away from the semiconductor body and the second contact is arranged laterally beside the protection diode region and the emission region on the side of the carrier facing the semiconductor body.

14. The radiation-emitting semiconductor chip according to claim 1, wherein the semiconductor body with the emission region and the protective diode region is connected to a first main area of the carrier by a connecting layer wherein the connecting layer completely covers the carrier.

15. The radiation-emitting semiconductor chip according to claim 1, comprising a first contact and a second contact for an external electrical contact connection wherein the first contact and the second contact do not transmit light generated in the active region.

16. A method of producing a plurality of radiation-emitting semiconductor chips comprising:

a) providing a semiconductor layer sequence having an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer;

b) forming a plurality of recesses extending through the second semiconductor layer and through the active region;

c) forming a second connection layer on the semiconductor layer sequence;

d) forming a first connection layer on the semiconductor layer sequence, wherein the first connection layer, in the recesses, electrically conductively connects to the first semiconductor layer, and the first connection layer electrically conductively connects in regions to the second semiconductor layer;

e) forming an assemblage comprising the semiconductor layer sequence and a carrier;

f) forming a plurality of emission regions and a plurality of protective diode regions from the semiconductor layer sequence, wherein the emission regions each have at least one recess and, in the protective diode regions, the first connection layer electrically conductively connects to the second semiconductor layer and wherein the second connection layer extends in a further recess of the semiconductor layer sequence from the first semiconductor layer toward the carrier; and

g) singulating the assemblage into a plurality of semiconductor chips, wherein each semiconductor chip has at least one emission region and at least one protective diode region.

17. The method according to claim 16, wherein, before step f), a growth substrate for the semiconductor layer sequence is removed at least in selected regions.

18. The method according to claim 16, further comprising producing a plurality of semiconductor chips.

19. A radiation-emitting semiconductor chip comprising a carrier, a semiconductor body having a semiconductor layer sequence, and an insulation layer, wherein

an emission region and a protective diode region are formed in the semiconductor body having the semiconductor layer sequence;

the semiconductor layer sequence comprises an active region that generates radiation and is arranged between a first semiconductor layer and a second semiconductor layer;

the first semiconductor layer is arranged on a side of the active region facing away from the carrier;

the emission region has a recess extending through the active region;

the first semiconductor layer, in the emission region, electrically conductively connects to a first connection layer, wherein the first connection layer extends in the recess from the first semiconductor layer toward the carrier;

the second semiconductor layer, in the emission region, electrically conductively connects to a second connection layer, the second connection layer running in regions between the emission region and the first connection layer;

the first connection layer, in the protective diode region, electrically conductively connects to the second semiconductor layer;

the protective diode region has a further recess, wherein the second connection layer extends from the first semiconductor layer in the further recess toward the carrier;

the insulation layer covers side areas of the further recess; and

the insulation layer extends beyond the protective diode region in a plan view of the semiconductor chip at least in regions.

20. The radiation-emitting semiconductor chip according to claim 19, wherein, in a plan view of the semiconductor chip, the protective diode region extends completely within an outer border of the insulation layer.