Semiconductor device having diode characteristic

• US 9,590,030 B2
• Filed: 09/16/2014
• Issued: 03/07/2017
• Est. Priority Date: 12/15/2009
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kitagawa, Mitsuhiko
• Primary Examiner(s): Nicely, Joseph C
• Application Number:
  US14/487,975
• Publication Number:
  US 20150001668A1
• Time in Patent Office: 903 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 27/0814 Diodes only
• CPC Class Codes: H01L 29/063 Reduced surface field [RESURF] pn-junction structures
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0638 for preventing surface leakage due to surface inversion layer, e.g. with channel stopper channel stoppers in combination with isolation region for integrated circuits H01L21/762
• CPC Class Codes: H01L 29/1608 Silicon carbide
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/205 in different semiconductor regions , e.g. heterojunctions
• CPC Class Codes: H01L 29/41 characterised by their shape, relative sizes or dispositions
• CPC Class Codes: H01L 29/7803 structurally associated with at least one other device assemblies H01L25/00; integrated circuits H01L27/00
• CPC Class Codes: H01L 29/7804 the other device being a pn-junction diode
• CPC Class Codes: H01L 29/7805 in antiparallel, e.g. freewheel diode
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/861 Diodes
• CPC Class Codes: H01L 29/8611 Planar PN junction diodes

Abstract

According to one embodiment, a semiconductor device is provided. The semiconductor device has a first region formed of semiconductor and a second region formed of semiconductor which borders the first region. An electrode is formed to be in ohmic-connection with the first region. A third region is formed to sandwich the first region. A first potential difference is produced between the first and the second regions in a thermal equilibrium state, according to a second potential difference between the third region and the first region.

Claims

1. A semiconductor device, comprising:

a first drift layer of a first conductivity type;

a first contact layer of a second conductivity type which is formed on the first drift layer;

a first electrode in ohmic-connection with the first drift layer; and

a second electrode having a first portion which is adjacent the first drift layer and a first portion of the first contact layer via an insulating film and a second portion which is directly contacting a side surface and an upper surface of a second portion of the first contact layer, the first portion of the first contact layer being between the second portion of the first contact layer and the first electrode.

2. The semiconductor device of claim 1, further comprising a second contact layer of the first conductivity type between the first drift layer and the second portion of the second electrode, the second contact layer having a concentration of first conductivity type dopants that is greater than a concentration of first conductivity type dopants in the first drift layer.

3. The semiconductor device of claim 2, wherein the first and second contact layers are provided alternately along an upper surface of the first drift layer.

4. The semiconductor device of claim 1, further comprising a semiconductor layer of the first conductivity type that is disposed between the first drift layer and the first portion of the second electrode, the semiconductor layer having a concentration of first conductivity type dopants that is greater than a concentration of first conductivity type dopants in the first drift layer.

5. The semiconductor device of claim 1, wherein the first portion of the second electrode comprises a plurality of trench portions that extend toward first electrode and into the first drift layer such that the first contact layer and a portion the first drift layer are disposed between adjacent trench portions of the second electrode.

6. The semiconductor device of claim 5, further comprising a second contact layer of the first conductivity type that is between the first drift layer and the second portion of the second electrode, the second contact layer having a concentration of first conductivity type dopants that is greater than a concentration of first conductivity type dopants in the first drift layer.

7. The semiconductor device of claim 6, wherein the second contact layer has at least a portion that is between the first drift layer and the first contact layer.

8. The semiconductor device of claim 1, wherein the first conductivity type is n-type and the second conductivity type is p-type.

9. A semiconductor device, comprising:

a first drift layer of a first conductivity type;

a first contact layer of a second conductivity type which is on the first drift layer;

a first electrode in ohmic-connection with the first drift layer; and

a second electrode having a first portion which is contacting the first drift layer and a first portion of the first contact via an insulating film and a second portion which is directly contacting a side surface and a first surface of a second portion of the first contact layer, the first surface of the second portion of the first contact layer not bordering the first contact layer.

10. The semiconductor device of claim 9, further comprising a second contact layer of the first conductivity type between the first drift layer and the second portion of the second electrode, the second contact layer having a concentration of first conductivity type dopants that is greater than a concentration of first conductivity type dopants in the first drift layer.

11. The semiconductor device of claim 9, further comprising a semiconductor layer of the first conductivity type between the first drift layer and the first electrode, the semiconductor layer having a concentration of first conductivity type dopants that is greater than a concentration of first conductivity type dopants in the first drift layer.

12. The semiconductor device of claim 9, wherein the first drift layer is a portion of a superjunction structure disposed between the first and second electrodes.

13. The semiconductor device of claim 9, wherein the first portion of the second electrode comprises a plurality of embedded trench portions that extend toward the first electrode and into the first drift layer.

14. The semiconductor device of claim 9, wherein the first conductivity type is n-type and the second conductivity type is p-type.