×

Semiconductor device with voltage resistant structure

  • US 9,590,061 B2
  • Filed: 03/04/2014
  • Issued: 03/07/2017
  • Est. Priority Date: 03/05/2013
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion; and

    a gate electrode buried in the gate trench via a gate insulating film,the outer peripheral portion having a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench,the cell portion including;

    a source region of a first conductivity type disposed in a manner exposed on a surface of the semiconductor layer;

    a channel region of a second conductivity type which is disposed in a manner contacting the source region; and

    a drain region of a first conductivity type disposed in a manner contacting the channel region,the semiconductor device further comprising;

    a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion; and

    a source electrode directly connected to the source region and the voltage resistant structure.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×