Semiconductor device with voltage resistant structure
First Claim
1. A semiconductor device comprising:
- a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion; and
a gate electrode buried in the gate trench via a gate insulating film,the outer peripheral portion having a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench,the cell portion including;
a source region of a first conductivity type disposed in a manner exposed on a surface of the semiconductor layer;
a channel region of a second conductivity type which is disposed in a manner contacting the source region; and
a drain region of a first conductivity type disposed in a manner contacting the channel region,the semiconductor device further comprising;
a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion; and
a source electrode directly connected to the source region and the voltage resistant structure.
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Accused Products
Abstract
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion, and a gate electrode buried in the gate trench via a gate insulating film, forming a channel at a portion lateral to the gate trench at ON-time, the outer peripheral portion has a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, and the semiconductor device further includes a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion.
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Citations
24 Claims
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1. A semiconductor device comprising:
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a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral portion disposed around the cell portion, formed with a gate trench at a surface side of the cell portion; and a gate electrode buried in the gate trench via a gate insulating film, the outer peripheral portion having a semiconductor surface disposed at a depth position equal to or deeper than a depth of the gate trench, the cell portion including; a source region of a first conductivity type disposed in a manner exposed on a surface of the semiconductor layer; a channel region of a second conductivity type which is disposed in a manner contacting the source region; and a drain region of a first conductivity type disposed in a manner contacting the channel region, the semiconductor device further comprising; a voltage resistant structure having a semiconductor region of a second conductivity type formed in the semiconductor surface of the outer peripheral portion; and a source electrode directly connected to the source region and the voltage resistant structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification