Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor drain layer of a first conductivity type;
a semiconductor drift layer of a second conductivity type overlying the semiconductor layer of the first conductivity type;
a second-conductivity-type body layer overlying the semiconductor layer of the second conductivity type;
a plurality of trenches extending into the semiconductor body and drift layers, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced fixed charge;
a plurality of control gates coupled to the body layer to control conduction therethrough; and
a plurality of first-conductivity-type source regions coupled to the semiconductor body layer of the second conductivity type;
wherein said intentionally introduced fixed charge at least partially balances the net charge in depleted portions of the semiconductor drift layer in the OFF state.
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Accused Products
Abstract
A semiconductor device includes a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type formed thereon. The semiconductor device also includes a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type and a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type. Each of the pair of trenches consists essentially of a dielectric material disposed therein and a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device. The semiconductor device further includes a control gate coupled to the semiconductor layer of the second conductivity type and a source region coupled to the semiconductor layer of the second conductivity type.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor drain layer of a first conductivity type; a semiconductor drift layer of a second conductivity type overlying the semiconductor layer of the first conductivity type; a second-conductivity-type body layer overlying the semiconductor layer of the second conductivity type; a plurality of trenches extending into the semiconductor body and drift layers, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced fixed charge; a plurality of control gates coupled to the body layer to control conduction therethrough; and a plurality of first-conductivity-type source regions coupled to the semiconductor body layer of the second conductivity type; wherein said intentionally introduced fixed charge at least partially balances the net charge in depleted portions of the semiconductor drift layer in the OFF state. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a semiconductor drain layer of a first conductivity type; a semiconductor drift layer overlying the drain layer, and including a first set of pillars having the first conductivity type and a second set of pillars having a second conductivity type a plurality of trenches extending into the drift layer, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced fixed charge; a plurality of control gates capacitively coupled to a plurality of second-conductivity-type body regions to control conduction therethrough; and a plurality of first-conductivity-type source regions coupled to the body region; wherein said intentionally introduced fixed charge at least partially balances the net charge in depleted portions of the second pillars. - View Dependent Claims (15)
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Specification