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Semiconductor device

  • US 9,590,075 B2
  • Filed: 01/27/2014
  • Issued: 03/07/2017
  • Est. Priority Date: 01/09/2007
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor drain layer of a first conductivity type;

    a semiconductor drift layer of a second conductivity type overlying the semiconductor layer of the first conductivity type;

    a second-conductivity-type body layer overlying the semiconductor layer of the second conductivity type;

    a plurality of trenches extending into the semiconductor body and drift layers, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced fixed charge;

    a plurality of control gates coupled to the body layer to control conduction therethrough; and

    a plurality of first-conductivity-type source regions coupled to the semiconductor body layer of the second conductivity type;

    wherein said intentionally introduced fixed charge at least partially balances the net charge in depleted portions of the semiconductor drift layer in the OFF state.

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