ITC-IGBT and manufacturing method therefor
First Claim
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1. A method for fabricating an Internally Transparent Collector-Insulated Gate Bipolar Transistor (ITC-IGBT), comprising:
- preparing a doped substrate;
forming a GexSi1-x/Si multiple quantum well strained superlattice layer on a surface of the doped substrate by means of the molecular beam epitaxy process; and
forming a doped layer on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer, wherein the GexSi1-x/Si multiple quantum well strained superlattice layer is N-type doped, with a doping concentration ranging from 1e13 cm−
3 to 5e13 cm−
3.
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Abstract
An ITC-IGBT and a manufacturing method therefor. The method comprises: providing a heavily doped substrate, forming a GexSi1-x/Si multi-quantum well strained super lattice layer on the surface of the heavily doped substrate, and forming a lightly doped layer on the surface of the GexSi1-x/Si multi-quantum well strained super lattice layer. The GexSi1-x/Si multi-quantum well strained super lattice layer is formed on the surface of the heavily doped substrate through one step, simplifying the production process of the ITC-IGBT.
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Citations
15 Claims
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1. A method for fabricating an Internally Transparent Collector-Insulated Gate Bipolar Transistor (ITC-IGBT), comprising:
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preparing a doped substrate; forming a GexSi1-x/Si multiple quantum well strained superlattice layer on a surface of the doped substrate by means of the molecular beam epitaxy process; and forming a doped layer on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer, wherein the GexSi1-x/Si multiple quantum well strained superlattice layer is N-type doped, with a doping concentration ranging from 1e13 cm−
3 to 5e13 cm−
3. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An Internally Transparent Collector-Insulated Gate Bipolar Transistor (ITC-IGBT), comprising:
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a collector region; a GexSi1-x/Si multiple quantum well strained superlattice layer located on a surface of the collector region; and a doped layer located on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer, wherein the GexSi1-x/Si multiple quantum well strained superlattice layer is N-type doped, with a doping concentration ranging from 1e13 cm−
3 to 5e13 cm−
3. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification