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ITC-IGBT and manufacturing method therefor

  • US 9,590,083 B2
  • Filed: 12/06/2012
  • Issued: 03/07/2017
  • Est. Priority Date: 12/06/2012
  • Status: Active Grant
First Claim
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1. A method for fabricating an Internally Transparent Collector-Insulated Gate Bipolar Transistor (ITC-IGBT), comprising:

  • preparing a doped substrate;

    forming a GexSi1-x/Si multiple quantum well strained superlattice layer on a surface of the doped substrate by means of the molecular beam epitaxy process; and

    forming a doped layer on a surface of the GexSi1-x/Si multiple quantum well strained superlattice layer, wherein the GexSi1-x/Si multiple quantum well strained superlattice layer is N-type doped, with a doping concentration ranging from 1e13 cm

    3
    to 5e13 cm

    3
    .

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