Gate-all-around fin device
First Claim
1. A semiconductor device comprising:
- a plurality of fin structures on a substrate;
a well of a first conductivity type and a well of a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures;
a source contact on an exposed portion of a first fin structure;
drain contacts on exposed portions of adjacent fin structures to the first fin structure; and
a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
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Accused Products
Abstract
A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.
46 Citations
12 Claims
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1. A semiconductor device comprising:
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a plurality of fin structures on a substrate; a well of a first conductivity type and a well of a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures; a source contact on an exposed portion of a first fin structure; drain contacts on exposed portions of adjacent fin structures to the first fin structure; and a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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Specification