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Gate-all-around fin device

  • US 9,590,108 B2
  • Filed: 01/14/2016
  • Issued: 03/07/2017
  • Est. Priority Date: 11/19/2014
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a plurality of fin structures on a substrate;

    a well of a first conductivity type and a well of a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures;

    a source contact on an exposed portion of a first fin structure;

    drain contacts on exposed portions of adjacent fin structures to the first fin structure; and

    a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

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