Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure
First Claim
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1. A semiconductor device structure, comprising:
- an SOI substrate comprising a semiconductor base substrate material, a buried insulating structure formed on said base substrate material, and a semiconductor film formed on said buried insulating structure, wherein said buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers;
a semiconductor device formed in and above an active region of said SOI substrate, comprising;
a gate structure;
raised source/drain regions located at opposing sides of said gate structure; and
a silicide contact region defined in said base substrate material below said semiconductor device;
a nitride material layer disposed above said semiconductor device and at least a portion of said silicide contact region,a contact dielectric disposed above said nitride material layer, anda back bias contact at least partially disposed in said contact dielectric and being electrically connected to said silicide contact region.
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Abstract
The present disclosure provides, in a first aspect, a semiconductor device structure, including an SOI substrate comprising a semiconductor base substrate, a buried insulating structure formed on the semiconductor base substrate and a semiconductor film formed on the buried insulating structure, wherein the buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers. The semiconductor device structure further includes a semiconductor device formed in and above an active region of the SOI substrate, and a back bias contact which is electrically connected to the semiconductor base substrate below the semiconductor device.
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Citations
15 Claims
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1. A semiconductor device structure, comprising:
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an SOI substrate comprising a semiconductor base substrate material, a buried insulating structure formed on said base substrate material, and a semiconductor film formed on said buried insulating structure, wherein said buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers; a semiconductor device formed in and above an active region of said SOI substrate, comprising; a gate structure; raised source/drain regions located at opposing sides of said gate structure; and a silicide contact region defined in said base substrate material below said semiconductor device; a nitride material layer disposed above said semiconductor device and at least a portion of said silicide contact region, a contact dielectric disposed above said nitride material layer, and a back bias contact at least partially disposed in said contact dielectric and being electrically connected to said silicide contact region. - View Dependent Claims (2, 3)
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4. A method of forming a semiconductor device structure, the method comprising:
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providing a wafer with an SOI structure having a buried insulating multilayer structure interposed between an active semiconductor layer and a base substrate material; forming a gate structure above said active semiconductor layer; forming raised source/drain regions at opposing sides of said gate structure; forming a back bias contact structure for contacting said base substrate material below said gate structure, said back bias contact structure being electrically insulated from said active semiconductor layer, wherein forming said back bias contact structure comprises partially removing said active semiconductor layer and said buried insulating multilayer structure for exposing a surface region of said base substrate material adjacent to said gate structure and performing a salicidation process for forming a self-aligned silicide contact region for contacting said exposed surface region of said base substrate material; depositing a nitride material layer above said gate structure after forming said silicide contact region, and depositing a contact dielectric over said deposited nitride material layer. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification