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Wafer with SOI structure having a buried insulating multilayer structure and semiconductor device structure

  • US 9,590,118 B1
  • Filed: 09/14/2015
  • Issued: 03/07/2017
  • Est. Priority Date: 09/14/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device structure, comprising:

  • an SOI substrate comprising a semiconductor base substrate material, a buried insulating structure formed on said base substrate material, and a semiconductor film formed on said buried insulating structure, wherein said buried insulating structure comprises a multilayer stack having a nitride layer interposed between two oxide layers;

    a semiconductor device formed in and above an active region of said SOI substrate, comprising;

    a gate structure;

    raised source/drain regions located at opposing sides of said gate structure; and

    a silicide contact region defined in said base substrate material below said semiconductor device;

    a nitride material layer disposed above said semiconductor device and at least a portion of said silicide contact region,a contact dielectric disposed above said nitride material layer, anda back bias contact at least partially disposed in said contact dielectric and being electrically connected to said silicide contact region.

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