Laser devices using a semipolar plane
First Claim
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1. A laser device comprising:
- a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation;
an n-type cladding region overlying the semipolar surface;
an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region;
a p-type cladding region overlying the active region;
a conductive oxide overlying the p-type cladding region;
a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;
a first facet having a first mirror surface provided on the first end of the laser stripe region;
a reflective coating provided on the first facet; and
a second facet having a second mirror surface provided on the second end of the laser stripe region;
wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm.
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Abstract
An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
210 Citations
20 Claims
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1. A laser device comprising:
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a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region;a p-type cladding region overlying the active region; a conductive oxide overlying the p-type cladding region; a laser stripe region comprising at least a portion of the p-type cladding region and the conductive oxide, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first facet having a first mirror surface provided on the first end of the laser stripe region; a reflective coating provided on the first facet; and a second facet having a second mirror surface provided on the second end of the laser stripe region; wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 400 nm and 500 nm or between 500 nm and 560 nm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A green laser device comprising:
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a gallium and nitrogen containing material comprising a semipolar surface configured on a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; an n-type cladding region overlying the semipolar surface; an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region;a laser stripe region overlying the active region, the laser stripe region comprising conductive oxide and being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end; a first facet having a first mirror surface provided on the first end of the laser stripe region; a reflective coating provided on the first facet; and a second facet having a second mirror surface provided on the second end of the laser stripe region; wherein the green laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm. - View Dependent Claims (11, 12, 13)
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14. A method for fabricating a laser device, the method comprising:
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providing a gallium and nitrogen containing material having a semipolar surface configured on one of either a (30-3-1) orientation, a (30-31) orientation, a (20-2-1) orientation, a (20-21) orientation, or a (30-3-2) orientation, the semipolar surface having an offcut of the orientation; forming an n-type cladding region overlying the semipolar surface; forming an active region comprising at least one light emitting active layer region overlying the n-type cladding region;
the light emitting active layer region comprising a quantum well region or a double hetero-structure region; anddepositing a conductive oxide overlying the active region, the conductive oxide being formed at a process temperature of less than 450°
C. to maintain a substantially crystalline characteristic of the active region to emit electromagnetic radiation within a desired electroluminescence efficiency, the conductive oxide forming at least a part of a laser stripe region, the laser stripe region being characterized by a cavity orientation substantially parallel to the projection of a c-direction, the laser stripe region having a first end and a second end;forming a first facet having a first mirror surface on the first end of the laser stripe region; forming a reflective coating on the first facet; and forming a second facet having a second mirror surface on the second end of the laser stripe region; wherein the laser device is configured to emit electromagnetic radiation with a peak wavelength of between 500 nm and 580 nm. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification