Atomic write command support in a solid state drive

• US 9,594,520 B2
• Filed: 12/21/2015
• Issued: 03/14/2017
• Est. Priority Date: 03/15/2013
• Status: Active Grant

• Current Assignee: JP Morgan Chase Bank, N.A. (JP Morgan Chase & Co)
• Original Assignee: Skyera, LLC (Western Digital Corporation), Western Digital Technologies Incorporated (Western Digital Corporation)
• Inventors: Tomlin, Andrew J., Jones, Justin, Mullendore, Rodney N.
• Primary Examiner(s): PATEL, KAUSHIKKUMAR M
• Application Number:
  US14/976,574
• Publication Number:
  US 20160110128A1
• Time in Patent Office: 449 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: G06F 12/0246 in block erasable memory, e.g. flash memory
• CPC Class Codes: G06F 12/0638 Combination of memories, e.g. ROM and RAM such as to permit replacement or supplementing of words in one module by words in another module address formation of the next microinstruction G06F9/26; masking faults in memories by using spares or by reconfiguring G11C29/70
• CPC Class Codes: G06F 12/1081 for peripheral access to main memory, e.g. direct memory access [DMA]
• CPC Class Codes: G06F 2212/205 Hybrid memory, e.g. using both volatile and non-volatile memory
• CPC Class Codes: G06F 2212/7201 Logical to physical mapping or translation of blocks or pages
• CPC Class Codes: G06F 2212/7209 Validity control, e.g. using flags, time stamps or sequence numbers
• CPC Class Codes: G06F 3/0619 in relation to data integrity, e.g. data losses, bit errors
• CPC Class Codes: G06F 3/065 Replication mechanisms
• CPC Class Codes: G06F 3/0659 Command handling arrangements, e.g. command buffers, queues, command scheduling
• CPC Class Codes: G06F 3/0685 Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays
• CPC Class Codes: G06F 3/0688 Non-volatile semiconductor memory arrays
• CPC Class Codes: G06F 9/466 Transaction processing
• CPC Class Codes: G11C 16/10 Programming or data input circuits

Abstract

A method of performing an atomic write command in a data storage device comprising a volatile memory and a plurality of non-volatile memory devices configured to store a plurality of physical pages. The method may comprise storing data in a plurality of logical pages (L-Pages), each associated with a logical address. A logical-to-physical address translation map may be maintained in the volatile memory, and may be configured to enable determination of a physical location, within one or more of the physical pages, of the data referenced by each logical address. The data specified by a received atomic write command may be stored one or more L-Pages. Updates to the entry or entries in the translation map associated with the L-Page(s) storing the data specified by the atomic write command may be deferred until all L-Pages storing data specified by the atomic write command have been written in a power-safe manner.

Claims

1. A method of performing an atomic write command in a data storage device comprising a volatile memory and a plurality of non-volatile memory devices that are configured to store a plurality of physical pages, the method comprising:

storing data in a plurality of logical pages (L-Pages), each of the plurality of L-Pages being associated with a logical address;

maintaining a logical-to-physical address translation map in the volatile memory, the translation map being configured to enable determination of a physical location, within one or more of the physical pages, of the data referenced by each logical address;

receiving the atomic write command;

storing data specified by the atomic write command in at least one L-Page;

storing information tracking a range of L-Pages in which the writing of at least some L-Pages specified by the atomic write command have been completed, wherein the written L-pages can be written out of order;

in the event the atomic write command does not complete, at reconstruction;

using the stored tracking information to generate a copy command that copies a current version of L-Pages within the range that existed before the atomic write command; and

deferring an update to at least one entry in the translation map associated with the at least one L-Page storing the data specified by the atomic write command until all L-Pages storing data specified by the atomic write command have been written in a power-safe manner.

2. The method of claim 1, comprising:

associating L-Pages of the atomic write command with a unique sequence number.

3. The method of claim 2, wherein storing information tracking a range of L-Pages comprises:

updating a table that stores atomic write commands by their unique sequence numbers, wherein the table associates a minimum and a maximum value for each atomic write command;

finding in the table the unique sequence number of an L-page written by the atomic write command;

comparing a number associated with the L-page to the minimum and maximum value associated with the unique sequence number;

updating the minimum value with the number associated with the L-page if the number is less than the minimum value; and

updating the maximum value with the number associated with the L-page if the number is greater than the maximum value.

4. A data storage device controller, comprising:

a processor, the processor being configured to perform an atomic write command in a data storage device comprising a volatile memory and a plurality of non-volatile memory devices that are configured to store a plurality of physical pages, by at least;

storing data in a plurality of logical pages (L-Pages), each of the plurality of L-Pages being associated with a logical address;

maintaining a logical-to-physical address translation map in the volatile memory, the translation map being configured to enable determination of a physical location, within one or more of the physical pages, of the data referenced by each logical address;

receiving the atomic write command;

storing data specified by the atomic write command in at least one L-Page; and

storing information tracking a range of L-Pages in which the writing of at least some L-Pages specified by the atomic write command have been completed, wherein the written L-pages can be written out of order;

in the event the atomic write command does not complete, at reconstruction;

using the stored tracking information to generate a copy command that copies a current version of L-Pages within the range that existed before the atomic write command; and

deferring an update to at least one entry in the translation map associated with the at least one L-Page storing the data specified by the atomic write command until all L-Pages storing data specified by the atomic write command have been written in a power-safe manner.

5. The data storage device controller of claim 4, wherein the processor is configured to:

associate L-Pages of the atomic write command with a unique sequence number.

6. The data storage device controller of claim 5, wherein the storing information tracking a range of L-Pages comprises:

updating a table that stores atomic write commands by their unique sequence numbers, wherein the table associates a minimum and a maximum value for each atomic write command;

finding in the table the unique sequence number of an L-page written by the atomic write command;

comparing a number associated with the L-page to the minimum and maximum value associated with the unique sequence number;

updating the minimum value with the number associated with the L-page if the number is less than the minimum value; and

updating the maximum value with the number associated with the L-page if the number is greater than the maximum value.