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Early prediction of failure in programming a nonvolatile memory

  • US 9,595,343 B1
  • Filed: 06/05/2016
  • Issued: 03/14/2017
  • Est. Priority Date: 06/05/2016
  • Status: Active Grant
First Claim
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1. A storage device, comprising:

  • multiple memory cells; and

    storage circuitry, which is configured to;

    write data to a group of the memory cells by applying to the group of the memory cells up to a maximal number of programming pulses;

    after applying less than the maximal number of programming pulses, evaluating a criterion that predicts whether or not the data will be written successfully within the maximal number of programming pulses; and

    when the criterion predicts that writing the data will fail, perform a corrective operation.

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