Antenna, dielectric window, plasma processing apparatus and plasma processing method

• US 9,595,425 B2
• Filed: 07/05/2012
• Issued: 03/14/2017
• Est. Priority Date: 07/06/2011
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsumoto, Naoki, Yoshikawa, Wataru, Yoshikawa, Jun, Moyama, Kazuki, Ishibashi, Kiyotaka, Morita, Osamu, Tanikawa, Takehiro
• Primary Examiner(s): DHINGRA, RAKESH KUMAR
• Application Number:
  US13/541,940
• Publication Number:
  US 20130008607A1
• Time in Patent Office: 1,713 Days
• Field of Search: 156/345.41, 118/723.MW
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32238 Windows

Abstract

An antenna, a dielectric window, a plasma processing apparatus and a plasma processing method are capable of improving uniformity of a substrate surface processing amount in the surface of the substrate. The antenna includes the dielectric window 16; and a slot plate 20, provided on one side of the dielectric window 16, having a plurality of slots 133. The dielectric window 16 has a flat surface 146 surrounded by a ring-shaped first recess; and a plurality of second recesses 153 formed on the flat surface 146 so as to surround a center of the flat surface 146. Here, the flat surface 146 is formed on the other side of the dielectric window 16. When viewed from a thickness direction of the slot plate, a center of each second recess 153 is located within each slot 133 of the slot plate.

Claims

1. A plasma processing apparatus comprising:

an antenna including a dielectric window and a slot plate which has a plurality of slots;

a central inlet unit having a central inlet opening positioned at a central portion of the dielectric window and above a central portion of a processing target substrate, the central inlet unit being configured to introduce a first processing gas into a plasma exciting region directly under the dielectric window;

a peripheral inlet unit arranged along a circumferential direction of a plasma diffusing region under the plasma exciting region and directly above the processing target substrate, the peripheral inlet unit being configured to introduce a second processing gas into the plasma diffusing region;

a processing chamber for accommodating the antenna therein;

a table, provided within the processing chamber so as to face a bottom surface of the dielectric window, for mounting the processing target substrate thereon;

a microwave inlet path that connects a microwave generator with the slot plate,

wherein the slot plate is provided on a top surface of the dielectric window, the dielectric window and the slot plate have circular plate shapes, and centers of the dielectric window and the slot plate have a same axis,

wherein the dielectric window comprises;

a ring shaped first recess formed on the bottom surface of the dielectric window and having a tapered shape inwardly in a plate thickness direction of the dielectric window, and

a plurality of second recesses formed on a flat surface surrounded by the ring shaped first recess and having circular shapes at a regular interval in a circumferential direction thereof, and

wherein a diameter of each second recess and a distance from a bottom surface of each second recess to the top surface of the dielectric window are set to be about ¼

of a wavelength of a microwave introduced to the dielectric window,

when viewed from a thickness direction of the slot plate, a center of each second recess is matched with a center of a corresponding slot of the slot plate, and

wherein the first processing gas includes a plasma excitation gas, and the second processing gas includes the plasma excitation gas and an etching gas,

wherein the central inlet unit includes a first through hole formed in the dielectric window and an injector having a plurality of second through holes, and the injector is formed as a single body with the dielectric window, and

wherein the plurality of second through holes of the injector communicate with the first through hole formed in the dielectric window,

an electric field shield member enclosing the injector and disposed completely inside the dielectric window, wherein the electric field shield member is extended downwardly to a position that is closer to a processing space than a bottom surface of the injector; and

a pipeline member being positioned above the injector and connected to an upper portion of the electric field shield member.

2. The plasma processing apparatus of claim 1, wherein the slot plate comprises:

a first slot group located at a first distance from a center of the slot plate,

a second slot group located at a second distance from the center of the slot plate,

a third slot group located at a third distance from the center of the slot plate, and

a fourth slot group located at a fourth distance from the center of the slot plate;

wherein the first distance, the second distance, the third distance and the fourth distance satisfy a relationship of the first distance<

the second distance<

the third distance<

the fourth distance,

wherein angles between a straight line extended from the center of the slot plate toward a target slot in a diametrical direction and a lengthwise direction of the target slot in the first to the fourth slot groups are identical to each other,

wherein a slot of the first slot group and a slot of the second slot group lying on a straight line extended from the center of the slot plate in the diametrical direction are elongated in different directions,

wherein a slot of the third slot group and a slot of the fourth slot group lying on a straight line extended from the center of the slot plate in the diametrical direction are elongated in different directions,

wherein the number of slots of the first slot group and the number of slots of the second slot group are identical to each other (N1),

wherein the number of slots of the third slot group and the number of slots of the fourth slot group are identical to each other (N2), and

wherein N2 is an integer multiple of N1.

3. The plasma processing apparatus of claim 1, further comprising:

a common gas line connected to a common gas source;

a flow splitter provided on the common gas line, and configured to split the common gas line into a first split common gas line and a second split common gas line and adjust a flow rate ratio between gases flowing in the first split common gas line and the second split common gas line; and

an additive gas line that connects an additive gas source with at least one of the first split common gas line and the second split common gas line.

4. The plasma processing apparatus of claim 1,

wherein the central inlet unit comprises:

a cylindrical block inserted into a cylindrical space of the dielectric window,

a gas storage portion formed between a bottom surface of an internal conductor of a coaxial waveguide and a top surface of the cylindrical block, and

a taper-shaped space having an opening, through which the first processing gas is discharged, at a leading end thereof.

5. The plasma processing apparatus of claim 1,

wherein the first and second processing gases from the central inlet unit and from the peripheral inlet unit are introduced alternately.

6. The plasma processing apparatus of claim 1, wherein the slot plate comprises:

an inner slot pair group arranged in an inner region of the slot plate and arranged at a regular interval in a circumferential direction of the slot plate so that one slot of each inner slot pair is arranged at a position where each second recess is formed; and

an outer slot pair group arranged in an outer region of the slot plate and arranged at a regular interval in the circumferential direction of the slot plate.

7. The plasma processing apparatus of claim 1, wherein the first recess has an inner tapered surface, a bottom surface and an outer tapered surface, and

the inner tapered surface, the bottom surface and the outer tapered surface of the first recess are extended as smooth curved surfaces so that a thickness of the dielectric window varies continually.

8. A plasma processing apparatus comprising:

an antenna including a dielectric window and a slot plate which has a plurality of slots;

a central inlet unit having a central inlet opening positioned at a central portion of the dielectric window and above a central portion of a processing target substrate, the central inlet unit being configured to introduce a first processing gas into a plasma exciting region directly under the dielectric window;

a peripheral inlet unit arranged along a circumferential direction of a plasma diffusing region under the plasma exciting region and directly above the processing target substrate, the peripheral inlet unit being configured to introduce a second processing gas into the plasma diffusing region;

a processing chamber for accommodating the antenna therein;

a table, provided within the processing chamber so as to face a bottom surface of the dielectric window, for mounting the processing target substrate thereon;

a microwave inlet path that connects a microwave generator with the slot plate,

wherein the slot plate is provided on a top surface of the dielectric window, the dielectric window and the slot plate have circular plate shapes, and centers of the dielectric window and the slot plate have a same axis,

wherein the dielectric window comprises;

a ring shaped first recess formed on the bottom surface of the dielectric window and having a tapered shape inwardly in a plate thickness direction of the dielectric window, and

a plurality of second recesses formed on a flat surface surrounded by the ring shaped first recess and having circular shapes at a regular interval in a circumferential direction thereof,

wherein a diameter of each second recess and a distance from a bottom surface of each second recess to the top surface of the dielectric window are set to be about ¼

of a wavelength of a microwave introduced to the dielectric window, and

when viewed from a thickness direction of the slot plate, a center of each second recess is matched with a center of a corresponding slot of the slot plate,

wherein the slot plate comprises;

a first slot group located at a first distance from a center of the slot plate,

a second slot group located at a second distance from the center of the slot plate,

a third slot group located at a third distance from the center of the slot plate, and

a fourth slot group located at a fourth distance from the center of the slot plate,

wherein the first distance, the second distance, the third distance and the fourth distance satisfy a relationship of the first distance<

the second distance<

the third distance<

the fourth distance,

wherein angles between a straight line extended from the center of the slot plate toward a target slot in a diametrical direction and a lengthwise direction of the target slot in the first to the fourth slot groups are identical to each other,

wherein a slot of the first slot group and a slot of the second slot group lying on a straight line extended from the center of the slot plate in the diametrical direction are elongated in different directions,

wherein a slot of the third slot group and a slot of the fourth slot group lying on a straight line extended from the center of the slot plate in the diametrical direction are elongated in different directions,

wherein the number of slots of the first slot group and the number of slots of the second slot group are identical to each other,

wherein the number of slots of the third slot group and the number of slots of the fourth slot group are identical to each other,

wherein the first processing gas includes a plasma excitation gas, and the second processing gas includes the plasma excitation gas and an etching gas,

wherein the central inlet unit includes a first through hole formed in the dielectric window and an injector having a plurality of second through holes, and the injector is formed as a single body with the dielectric window, and

wherein the plurality of second through holes of the injector communicate with the first through hole formed in the dielectric window,

an electric field shield member enclosing the injector and disposed completely inside the dielectric window, wherein the electric field shield member is extended downwardly to a position that is closer to a processing space than a bottom surface of the injector, and

a pipeline member being positioned above the injector and connected to an upper portion of the electric field shield member.