Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device

• US 9,595,435 B2
• Filed: 10/17/2013
• Issued: 03/14/2017
• Est. Priority Date: 10/19/2012
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsubuku, Masashi, Watanabe, Ryosuke, Ishihara, Noritaka, Oota, Masashi
• Primary Examiner(s): Bachner, Robert
• Assistant Examiner(s): Chin, James
• Application Number:
  US14/055,970
• Publication Number:
  US 20140113405A1
• Time in Patent Office: 1,244 Days
• Field of Search: 438/104, 257/43, 257/57, 257/60
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02472 Oxides
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02502 consisting of two layers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 21/02664 Aftertreatments planarisation in general H01L21/304
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer;

adding oxygen to the first oxide semiconductor layer by using an ion implantation method, an ion doping method, or plasma treatment;

forming a second oxide semiconductor layer over the first oxide semiconductor layer after adding the oxygen; and

performing heat treatment after forming the second oxide semiconductor layer so that a part of oxygen in the first oxide semiconductor layer is transferred to the second oxide semiconductor layer.

2. The method for manufacturing the semiconductor device according to claim 1, wherein the second oxide semiconductor layer comprises one of indium, gallium, and zinc.

3. The method for manufacturing the semiconductor device according to claim 1, further comprising the step of:

forming an insulating layer under the first oxide semiconductor layer before forming the first oxide semiconductor layer,

wherein oxygen is added to the insulating layer in the step of adding the oxygen.

4. The method for manufacturing the semiconductor device according to claim 1, further comprising the steps of:

forming a first gate electrode;

forming a first insulating layer over the first gate electrode before forming the first oxide semiconductor layer; and

forming a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,

wherein the first gate electrode overlaps with the second oxide semiconductor layer.

5. The method for manufacturing the semiconductor device according to claim 4, further comprising the steps of:

forming a second insulating layer over the second oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a second gate electrode over the second insulating layer,

wherein the second gate electrode overlaps with the second oxide semiconductor layer.

6. The method for manufacturing the semiconductor device according to claim 1, further comprising the steps of:

forming a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,

forming an insulating layer over the second oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a gate electrode over the insulating layer;

wherein the gate electrode overlaps with the second oxide semiconductor layer.

7. The method for manufacturing the semiconductor device according to claim 1, wherein the first oxide semiconductor layer comprises one of indium, gallium, and zinc.

8. The method for manufacturing the semiconductor device according to claim 1, wherein an amount of the oxygen added to the first oxide semiconductor layer is greater than or equal to 5×

10¹⁴/cm² and less than or equal to 5×

10¹⁶/cm².

9. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer;

forming a second oxide semiconductor layer over the first oxide semiconductor layer;

adding oxygen to the second oxide semiconductor layer by using an ion implantation method, an ion doping method, or plasma treatment; and

performing heat treatment after adding the oxygen so that a part of oxygen in the second oxide semiconductor layer is transferred to the first oxide semiconductor layer.

10. The method for manufacturing the semiconductor device according to claim 9, wherein the first oxide semiconductor layer comprises one of indium, gallium, and zinc.

11. The method for manufacturing the semiconductor device according to claim 9, further comprising the steps of:

forming a first gate electrode;

forming a first insulating layer over the first gate electrode before forming the first oxide semiconductor layer; and

forming a source electrode and a drain electrode electrically connected to the first oxide semiconductor layer,

wherein the first gate electrode overlaps with the first oxide semiconductor layer.

12. The method for manufacturing the semiconductor device according to claim 11, further comprising the steps of:

forming a second insulating layer over the second oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a second gate electrode over the second insulating layer,

wherein the second gate electrode overlaps with the first oxide semiconductor layer.

13. The method for manufacturing the semiconductor device according to claim 9, further comprising the steps of:

forming a source electrode and a drain electrode electrically connected to the first oxide semiconductor layer,

forming an insulating layer over the second oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a gate electrode over the insulating layer;

wherein the gate electrode overlaps with the first oxide semiconductor layer.

14. The method for manufacturing the semiconductor device according to claim 9, wherein the second oxide semiconductor layer comprises one of indium, gallium, and zinc.

15. The method for manufacturing the semiconductor device according to claim 9, wherein an amount of the oxygen added to the first oxide semiconductor layer is greater than or equal to 5×

10¹⁴/cm² and less than or equal to 5×

10¹⁶/cm².

16. A method for manufacturing a semiconductor device, comprising the steps of:

forming a first oxide semiconductor layer;

adding oxygen to the first oxide semiconductor layer by using an ion implantation method, an ion doping method, or plasma treatment;

forming a second oxide semiconductor layer over the first oxide semiconductor layer after adding the oxygen;

forming a third oxide semiconductor layer over the second oxide semiconductor layer; and

performing heat treatment after forming the second oxide semiconductor layer so that a part of oxygen in the first oxide semiconductor layer is transferred to the second oxide semiconductor layer.

17. The method for manufacturing the semiconductor device according to claim 16, wherein the second oxide semiconductor layer comprises one of indium, gallium, and zinc.

18. The method for manufacturing the semiconductor device according to claim 16, further comprising the step of:

forming an insulating layer under the first oxide semiconductor layer before forming the first oxide semiconductor layer,

wherein oxygen is added to the insulating layer in the step of adding the oxygen.

19. The method for manufacturing the semiconductor device according to claim 16, further comprising the steps of:

forming a first gate electrode;

forming a first insulating layer over the first gate electrode before forming the first oxide semiconductor layer; and

forming a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,

wherein the first gate electrode overlaps with the second oxide semiconductor layer.

20. The method for manufacturing the semiconductor device according to claim 19, further comprising the steps of:

forming a second insulating layer over the third oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a second gate electrode over the second insulating layer,

wherein the second gate electrode overlaps with the second oxide semiconductor layer.

21. The method for manufacturing the semiconductor device according to claim 16, further comprising the steps of:

forming a source electrode and a drain electrode electrically connected to the second oxide semiconductor layer,

forming an insulating layer over the third oxide semiconductor layer, the source electrode, and the drain electrode; and

forming a gate electrode over the insulating layer;

wherein the gate electrode overlaps with the second oxide semiconductor layer.

22. The method for manufacturing the semiconductor device according to claim 16, wherein the first oxide semiconductor layer comprises one of indium, gallium, and zinc.

23. The method for manufacturing the semiconductor device according to claim 16, wherein an amount of the oxygen added to the first oxide semiconductor layer is greater than or equal to 5×

10¹⁴/cm² and less than or equal to 5×

10¹⁶/cm².