Method of forming semiconductor structure with anti-punch through structure
First Claim
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1. A method for manufacturing a semiconductor structure, comprising:
- implanting a first type of dopants in a first region and a second region of a substrate;
implanting a second type of dopants in the second region of the substrate;
forming a material layer over the first region and the second region of the substrate;
patterning the material layer, the first region of the substrate, and the second region of the substrate to form a first fin structure and a second fin structure; and
forming a gate structure across the first fin structure and the second fin structure.
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Abstract
A method for manufacturing a semiconductor structure is provided. The method includes implanting a first type of dopants in a first region and a second region of a substrate and implanting a second type of dopants in the second region of the substrate. The method includes forming a material layer over the first region and the second region of the substrate and patterning the material layer, the first region of the substrate, and the second region of the substrate to form a first fin structure and a second fin structure The method includes forming a gate structure across the first fin structure and the second fin structure.
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Citations
20 Claims
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1. A method for manufacturing a semiconductor structure, comprising:
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implanting a first type of dopants in a first region and a second region of a substrate; implanting a second type of dopants in the second region of the substrate; forming a material layer over the first region and the second region of the substrate; patterning the material layer, the first region of the substrate, and the second region of the substrate to form a first fin structure and a second fin structure; and forming a gate structure across the first fin structure and the second fin structure. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a semiconductor structure, comprising:
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forming a strain relax buffer layer over a substrate; implanting a first type of dopants in a first region of the strain relax buffer layer; implanting a second type of dopants in the second region of the strain relax buffer layer; forming a material layer over the first region and the second region of the strain relax buffer layer; patterning the material layer, the first region of the strain relax buffer layer, and the second region of the strain relax buffer layer to form a first fin structure and a second fin structure; and forming a gate structure across the first fin structure and the second fin structure. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor structure, comprising:
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implanting a first type of dopants in a first region of a substrate; implanting a second type of dopants in a second region of the substrate; forming a material layer over the first region and the second region of the substrate; patterning the material layer, the first region of the substrate, and the second region of the substrate to form a first fin structure and a second fin structure; and forming a gate structure across the first fin structure and the second fin structure. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification