Semiconductor device including electromagnetic absorption and shielding
First Claim
Patent Images
1. A semiconductor device, comprising:
- a substrate including a dielectric core, a conductive layer on the dielectric core, and a solder mask layer on the conductive layer, the substrate including a first absorbing material for absorbing at least one of EMI and RFI;
one or more semiconductor die affixed to the substrate;
an encapsulant covering the one or more semiconductor die; and
first and second continuous layers provided on the encapsulant, the first and second continuous layers being directly adjacent to each other, the first continuous layer including a second absorbing material for absorbing at least one of EMI and RFI, and the second continuous layer including a conductive material for shielding the semiconductor device against at least one of EMI and RFI.
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Accused Products
Abstract
A semiconductor device is disclosed including material for absorbing EMI and/or RFI The device includes a substrate (202), one or more semiconductor die (224,225), and molding compound around the one or more semiconductor die (224,225). The material for absorbing EMI and/or RFI may be provided within or on a solder mask layer (210) on the substrate (202). The device may further include EMI/RFI-absorbing material around the molding compound and in contact with the EMI/RFI-absorbing material on the substrate to completely enclose the one or more semiconductor die in EMI/RFI-absorbing material.
17 Citations
17 Claims
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1. A semiconductor device, comprising:
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a substrate including a dielectric core, a conductive layer on the dielectric core, and a solder mask layer on the conductive layer, the substrate including a first absorbing material for absorbing at least one of EMI and RFI; one or more semiconductor die affixed to the substrate; an encapsulant covering the one or more semiconductor die; and first and second continuous layers provided on the encapsulant, the first and second continuous layers being directly adjacent to each other, the first continuous layer including a second absorbing material for absorbing at least one of EMI and RFI, and the second continuous layer including a conductive material for shielding the semiconductor device against at least one of EMI and RFI. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device, comprising:
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a substrate; a solder mask layer on the substrate, the solder mask layer including a first absorbing material for absorbing at least one of EMI and RFI; one or more semiconductor die affixed and electrically connected to the substrate; a molding compound encapsulating at least the one or more semiconductor die; and first and second continuous layers provided on the molding compound, the first continuous layer including a second absorbing material for absorbing at least one of EMI and RFI, and the second continuous layer including a conductive material for shielding the semiconductor device against at least one of EMI and RFI. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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Specification