Superjunction structures for power devices

• US 9,595,596 B2
• Filed: 01/05/2015
• Issued: 03/14/2017
• Est. Priority Date: 09/21/2007
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Fairchild Semiconductor Corporation (ON Semiconductor Corporation)
• Inventors: Yedinak, Joseph A., Lee, Jaegil, Yun, Chongman, Shenoy, Praveen Muraleedharan, Rexer, Christopher L.
• Primary Examiner(s): FERNANDES, ERROL V
• Application Number:
  US14/589,544
• Publication Number:
  US 20150187873A1
• Time in Patent Office: 799 Days
• Field of Search: 257/302, 257328-330, 257/341, 257/342, 257/500
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/26513 of electrically active species
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/0696 of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
• CPC Class Codes: H01L 29/0878 Impurity concentration or distribution
• CPC Class Codes: H01L 29/1075 of field-effect transistors
• CPC Class Codes: H01L 29/1095 Body region, i.e. base region, of DMOS transistors or IGBTs cell layout H01L29/0696
• CPC Class Codes: H01L 29/404 Multiple field plate structures
• CPC Class Codes: H01L 29/66712 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7397 and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type. The power device can include a termination region surrounding at least a portion of the active region and can have a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type. Each of the plurality of pillars of the first conductivity type in the active region and the termination region can be defined by a trench. The power device can include an enrichment region at a bottom portion of one of the plurality of pillars of the first conductivity type in the active region.

Claims

1. A power device, comprising:

an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type;

a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, each of the plurality of pillars of the first conductivity type in the active region and the termination region being defined by a trench; and

an enrichment region at a bottom portion of one of the plurality of pillars of the first conductivity type in the active region, the enrichment region being an imbalance area having a doping extending to a depth in the power device deeper than a depth of the plurality of pillars of the second conductivity type and deeper than a depth of a bottom of each of the trenches of the first conductivity type.

2. The power device of claim 1, wherein the first conductivity type is P-type and the second conductivity type is N-type, or the first conductivity type is N-type and the second conductivity type is P-type.

3. The power device of claim 1, wherein the trenches of each of the plurality of pillars of first conductivity type in the active region and the termination region are filled with P-type silicon, the trenches are separated from one another by N-type regions forming the plurality of pillars of second conductivity type in the active region and the termination region.

4. The power device of claim 1, wherein the plurality of pillars of the first conductivity type in the active region have substantially the same doping profile as the plurality of pillars of first conductivity type in the termination region.

5. The power device of claim 1, wherein the active region includes a planar gate structure extending over at least one of the plurality of pillars of the second conductivity type in the active region.

6. The power device of claim 1, wherein the active region does not include a gate structure extending over any of the pillars of second conductivity type in the active region.

7. The power device of claim 1, wherein the plurality of pillars of the first conductivity type in the active region are stripe-shaped, and the plurality of plurality of pillars of first conductivity type in the termination region surround the active region in a concentric fashion.

8. The power device of claim 1, wherein a plurality of termination pillars are parallel to the plurality of pillars of the first conductivity type in the active region.

9. The power device of claim 1, wherein the enrichment region has a width greater than a width of the one of the plurality of pillars of the first conductivity type.

10. The power device of claim 1, wherein the enrichment region is of the second conductivity type.

11. The power device of claim 1, further comprising:

at least one of the plurality of pillars of the first conductivity type in the termination region having a top portion including a diffusion ring, the diffusion ring having a depth shallower than a depth of a P-well in an active region and shallower than a depth of an isolation region included in a transition region.

12. The power device of claim 1, wherein the enrichment region extends from the bottom portion of the at least one of the plurality of pillars of the first conductivity type and extends to a depth below a depth of the one of the plurality of pillars of the first conductivity type.

13. The power device of claim 1, wherein the one of the plurality of pillars of the first conductivity type has a bottom portion disposed in a first epitaxial layer and disposed above a second epitaxial layer, the enrichment region has at least a portion disposed in the second epitaxial layer.

14. The power device of claim 1, wherein the one of the plurality of pillars of the first conductivity type has a first portion disposed in a first epitaxial layer and a second portion disposed in a second epitaxial layer, the enrichment region has at least a portion disposed in the second epitaxial layer.

15. The power device of claim 1, wherein the enrichment region is of the first conductivity type.

16. A power device, comprising:

an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type;

a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, each of the plurality of pillars of the first conductivity type in the active region and the termination region being defined by a trench; and

an enrichment region of the first conductivity type having a portion extending from a bottom portion of one of the plurality of pillars of the first conductivity type in the active region, the enrichment region being an imbalance area having a doping extending to a depth in the power device deeper than a depth of the plurality of pillars of the second conductivity type and deeper than a depth of a bottom of each of the trenches of the first conductivity type.

17. The power device of claim 16, further comprising:

a transition region including an isolation diffusion electrically coupling at least two of the pillars of the first conductivity type in the transition region to at least one of the pillars of the first conductivity type in the active region,

at least one of the plurality of pillars of the first conductivity type in the termination region having a top portion including a diffusion ring shallower than the isolation diffusion.

18. The power device of claim 16, wherein the active region includes a trench gate structure extending to a predetermined depth within at least one of the plurality of pillars of the second conductivity type in the active region.

19. The power device of claim 16, wherein the plurality of pillars of the second conductivity type in the termination region and the plurality of pillars of the second conductivity type in the active region are defined such that a charge balance condition results in a higher breakdown voltage in the termination region than in the active region.

20. The power device of claim 16, wherein the bottom portion is disposed in a first epitaxial layer and disposed above a second epitaxial layer, the enrichment region has at least a portion disposed in the second epitaxial layer.

21. The power device of claim 16, wherein the one of the plurality of pillars of the first conductivity type has a first portion disposed in a first epitaxial layer and a second portion disposed in a second epitaxial layer.