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Superjunction structures for power devices

  • US 9,595,596 B2
  • Filed: 01/05/2015
  • Issued: 03/14/2017
  • Est. Priority Date: 09/21/2007
  • Status: Active Grant
First Claim
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1. A power device, comprising:

  • an active region having a plurality of pillars of a first conductivity type alternately arranged with a plurality of pillars of a second conductivity type;

    a termination region surrounding at least a portion of the active region and having a plurality of pillars of the first conductivity type alternately arranged with a plurality of pillars of the second conductivity type, each of the plurality of pillars of the first conductivity type in the active region and the termination region being defined by a trench; and

    an enrichment region at a bottom portion of one of the plurality of pillars of the first conductivity type in the active region, the enrichment region being an imbalance area having a doping extending to a depth in the power device deeper than a depth of the plurality of pillars of the second conductivity type and deeper than a depth of a bottom of each of the trenches of the first conductivity type.

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