Nanoscale wires, nanoscale wire FET devices, and nanotube-electronic hybrid devices for sensing and other applications

• US 9,595,685 B2
• Filed: 06/07/2012
• Issued: 03/14/2017
• Est. Priority Date: 06/10/2011
• Status: Active Grant

• Current Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Original Assignee: President and Fellows of Harvard College (Harvard Corporation)
• Inventors: Lieber, Charles M., Duan, Xiaojie, Gao, Ruixuan, Xie, Ping, Jiang, Xiaocheng
• Primary Examiner(s): Hollington, Jermele M
• Application Number:
  US14/124,816
• Publication Number:
  US 20140184196A1
• Time in Patent Office: 1,741 Days
• Field of Search: None
• US Class Current: 1/1
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: G01N 27/4146 involving nanosized elements, e.g. nanotubes, nanowires
• CPC Class Codes: G01R 1/02 General constructional details
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/775 with one dimensional charge carrier gas channel, e.g. quantum wire FET
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 71/10 Deposition of organic active material

Abstract

The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.

Claims

1. A field effect transistor, comprising:

a source electrode;

a drain electrode;

a transistor channel electrically connecting the source electrode to the drain electrode wherein the transistor channel comprises a nanoscale wire; and

a nanotube positioned such that one end of the nanotube physically contacts a side of the transistor channel.

2. The field effect transistor of claim 1, wherein the nanotube contains a liquid.

3. The field effect transistor of claim 1, wherein the nanotube comprises an oxide.

4. The field effect transistor of claim 1, wherein the nanotube comprises a metal.

5. The field effect transistor of claim 1, wherein the nanotube is substantially nonconductive.

6. The field effect transistor of claim 1, wherein the nanotube has an inner diameter of less than about 5 micrometers.

7. The field effect transistor of claim 1, wherein the nanotube has a length of at least about 50 nm.

8. The field effect transistor of claim 1, wherein the nanotube has a length of at least about 1 micrometer.

9. The field effect transistor of claim 1, wherein the transistor channel is positioned substantially perpendicularly relative to the nanotube.

10. The field effect transistor of claim 1, wherein the transistor channel comprises a semiconductor.

11. The field effect transistor of claim 1, wherein the transistor channel is a solid nanowire.

12. The field effect transistor of claim 1, wherein the transistor channel has an average cross-sectional diameter of less than about 200 nm.

13. The field effect transistor of claim 1, wherein the transistor channel further comprises a coating.

14. A sensor, comprising:

a substrate comprising a plurality of field effect transistors, at least some of which are the field effect transistors comprising a source electrode, a drain electrode, a transistor channel electrically connecting the source electrode to the drain electrode wherein the transistor channel comprises a nanoscale wire, and a nanotube positioned such that one end of the nanotube physically contacts a side of the transistor channel.

15. A method of determining an electrical property of a cell, comprising:

inserting a fluidic channel into an interior of a cell, wherein the fluidic channel is in electrical communication with a portion of a gate of a field effect transistor and the gate is external of the cell, and wherein the fluidic channel is a nanotube; and

determining an electrical property of the cell.