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Radio-frequency switches having gate bias and frequency-tuned body bias

  • US 9,595,951 B2
  • Filed: 08/29/2014
  • Issued: 03/14/2017
  • Est. Priority Date: 07/07/2012
  • Status: Active Grant
First Claim
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1. A radio-frequency (RF) switch comprising:

  • a plurality of field-effect transistors (FETs) disposed between a first node and a second node, each of the plurality of FETs having a respective source, drain, gate and body, the plurality of FETs including a first FET connected in series with a second FET;

    a coupling circuit that connects the body of each of the plurality of FETs to the gate of each of the plurality of FETs, the coupling circuit including a first circuit coupled in series to a resistance, the first circuit including a capacitance and a diode, the coupling circuit configured to behave as an approximately closed circuit at low frequencies below a selected value and an approximately open circuit at an operating frequency, the approximately closed circuit allowing removal of surface charge from the body;

    a bias circuit that connects the gate of each of the plurality of FETs to a gate bias voltage, the bias circuit configured to bias the gate of each of the plurality of FETs; and

    a compensation circuit including a non-linear capacitor connected at a first end to both the source of the first FET and the drain of the second FET, and further connected at a second end to a ground reference, the compensation circuit configured to generate one or more harmonics to substantially cancel a non-linearity effect generated by at least one of the plurality of FETs.

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