Display apparatus

• US 9,599,869 B2
• Filed: 12/08/2013
• Issued: 03/21/2017
• Est. Priority Date: 01/23/2013
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Kang, Taeho, Yang, Sukyoung, Park, Joonyong, Kim, Sanggab, Jeong, Changoh, Kim, Kyungseop, Kim, Gwan Ha, Kim, Byeong-Beom, Ning, Honglong, Shin, Sangwon, Yeo, Yunjong, Lee, Dongmin, Choi, Shin Il, Kang, Hyunju, Sohn, Sangwoo, Son, Jungha, Jeong, Yu-Gwang, Jo, Gugrae, Hwang, Jinho
• Primary Examiner(s): CHANG, CHARLES S
• Application Number:
  US14/099,971
• Publication Number:
  US 20140204315A1
• Time in Patent Office: 1,199 Days
• Field of Search: 349/46
• US Class Current: 1/1
• CPC Class Codes: G02F 1/133548 Wire-grid polarisers
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/13629 Multilayer wirings
• CPC Class Codes: G02F 2201/38 Anti-reflection arrangements

Abstract

A display apparatus includes a backlight assembly which generates a light and a display panel which receives the light to display an image, the display panel including a first substrate, a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate, a gate line disposed on the first substrate, a data line disposed on the gate line and insulated from the gate line, a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line, and a reflection preventing layer disposed between the first substrate and the gate line to reduce an amount of a reflected light reflected by the gate line.

Claims

1. A display apparatus comprising:

a backlight assembly which generates a light; and

a display panel which receives the light to display an image, the display panel comprising;

a first substrate;

a second substrate which faces the first substrate and is disposed closer to the backlight assembly than the first substrate;

a gate line disposed on the first substrate;

a data line disposed on the gate line and insulated from the gate line;

a thin film transistor disposed on the first substrate and electrically connected to the gate line and the data line; and

a reflection preventing layer which is disposed between the first substrate and the gate line, and the reflection preventing layer reducing an amount of a reflected light reflected by the gate line,

wherein the reflection preventing layer comprises a first sub-layer which is disposed on the first substrate and has a first refractive index, and a second sub-layer which is disposed between the first sub-layer and the gate line, and has a second refractive index which is greater than the first refractive index, and

wherein the reflected light is an external light reflected by the gate line, and a thickness of the first sub-layer and a thickness of the second sub-layer are obtained based on following equation,

(d1+d2)≈

{(λ

/4)×

(1/n₁)}+{(λ

/4)×

(1/n₂)},

d1 denotes the thickness of the first sub-layer, d2 denotes the thickness of the second sub-layer, λ

denotes a wavelength of the external light, n₁ denotes the first refractive index of the first sub-layer, and n₂ denotes the second refractive index of the second sub-layer.

2. The display apparatus of claim 1, wherein the reflection preventing layer has a single-layer structure.

3. The display apparatus of claim 2, wherein the reflection preventing layer reduces the amount of the reflected light by using a destructive interference occurring between the reflected light and a light reflected by the reflection preventing layer.

4. The display apparatus of claim 3, wherein

the reflected light is an external light reflected by the gate line, and

a thickness of the reflection preventing layer is obtained based on following equation 1, d≈

(λ

/4)×

(1/n), wherein d denotes the thickness of the reflection preventing layer, λ

denotes a wavelength of the external light, and n denotes a refractive index of the reflection preventing layer.

5. The display apparatus of claim 2, wherein the reflection preventing layer comprises copper oxide.

6. The display apparatus of claim 5, wherein the reflection preventing layer has a thickness of about 100 angstroms to about 500 angstroms.

7. The display apparatus of claim 1, wherein

the gate line comprises at least one of copper, aluminum, molybdenum and titanium, and

the gate line has a thickness of about 0.3 micrometer to about 2.0 micrometers.

8. The display apparatus of claim 1, wherein the reflection preventing layer reduces the amount of the reflected light by using a destructive interference occurring between the reflected light and a light reflected by the first and second sub-layers.

9. The display apparatus of claim 1, wherein

the first sub-layer comprises at least one of metal oxide, metal nitride, transparent conductive oxide and metal, and

the second sub-layer comprises at least one of metal oxide, metal nitride and transparent conductive oxide.

10. The display apparatus of claim 9, wherein each of the first sub-layer and the second sub-layer has a thickness of about 50 angstroms to about 800 angstroms.

11. The display apparatus of claim 9, wherein the first sub-layer comprises molybdenum oxide and the second sub-layer comprises titanium nitride, or the first sub-layer comprises titanium oxide and the second sub-layer comprises titanium nitride, or the first sub-layer comprises aluminum oxide and the second sub-layer comprises copper oxide, or the first sub-layer comprises copper oxide and the second sub-layer comprises one of titanium nitride and molybdenum nitride, the first sub-layer comprises silicon oxide and the second sub-layer comprises copper oxide, or the first sub-layer comprises aluminum nitride and the second sub-layer comprises titanium nitride, or the first sub-layer comprises copper nitride and the second sub-layer comprises one of silicon oxide, aluminum oxide, gallium zinc oxide, aluminum zinc oxide, indium zinc oxide, silicon nitride, molybdenum oxide, aluminum nitride, and titanium oxide, or the first sub-layer comprises silicon nitride and the second sub-layer comprises copper oxide, or the first sub-layer comprises indium tin oxide and the second sub-layer comprises one of aluminum nitride and copper oxide, or the first sub-layer comprises indium zinc oxide and the second sub-layer comprises copper oxide, the first sub-layer comprises gallium zinc oxide and the second sub-layer comprises copper oxide, or the first sub-layer comprises aluminum zinc oxide and the second sub-layer comprises copper oxide, or the first sub-layer comprises titanium and the second sub-layer comprises gallium zinc oxide, indium zinc oxide, molybdenum oxide, and titanium oxide.

12. The display apparatus of claim 11, wherein a weight percent of indium oxide of the indium zinc oxide is in a range of about 10 wt % to about 90 wt %.

13. The display apparatus of claim 11, wherein a weight percent of aluminum oxide of the aluminum zinc oxide is in a range of about 0.1 wt % to about 10 wt %.

14. The display apparatus of claim 11, wherein a weight percent of gallium oxide of the gallium zinc oxide is in a range of about 0.1 wt % to about 30 wt %.

15. The display apparatus of claim 1, further comprising a pixel electrode electrically connected to the thin film transistor,

wherein the thin film transistor comprises:

a gate electrode disposed on the first substrate and electrically connected to the gate line;

an active pattern overlapped with the gate electrode;

a source electrode disposed on the active pattern and electrically connected to the data line; and

a drain electrode spaced apart from the source electrode, disposed on the active pattern, and electrically connected to the pixel electrode,

wherein the reflection preventing layer which is disposed between the gate electrode and the first substrate, and reduces the amount of the reflected light reflected by the gate electrode.

16. The display apparatus of claim 1, wherein the reflection preventing layer has a reflectivity of about 0.1% to about 5.0%.