Magnetoelectric device, method for forming a magnetoelectric device, and writing method for a magnetoelectric device

• US 9,601,174 B2
• Filed: 02/26/2015
• Issued: 03/21/2017
• Est. Priority Date: 03/05/2014
• Status: Expired due to Fees

• Current Assignee: Agency For Science Technology and Research
• Original Assignee: Agency For Science Technology and Research
• Inventors: Tran, Michael, Sim, Cheow Hin, Han, Guchang
• Primary Examiner(s): Huang, Min
• Application Number:
  US14/632,442
• Publication Number:
  US 20150255135A1
• Time in Patent Office: 754 Days
• Field of Search: 365/158
• US Class Current: 1/1
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: H10N 50/10 Magnetoresistive devices
• CPC Class Codes: H10N 50/85 Magnetic active materials

Abstract

A magnetoelectric device is provided. The magnetoelectric device includes a reference magnetic layer structure having a fixed magnetization orientation, and a synthetic antiferromagnetic layer structure including a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable, wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other. According to further embodiments of the present invention, a method for forming a magnetoelectric device and a writing method for a magnetoelectric device are also provided.

Claims

1. A magnetoelectric device comprising:

a reference magnetic layer structure having a fixed magnetization orientation; and

a synthetic antiferromagnetic layer structure comprising a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable; and

an insulating layer arranged in between the free magnetic layer structure and the reference magnetic layer structure;

wherein the insulating layer is configured to prevent the free magnetic layer structure being subjected to spin-transfer torque effect; and

wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other.

2. The magnetoelectric device as claimed in claim 1, wherein the magnetization orientation of the free magnetic layer structure is variable from a first direction to a second direction different from the first direction in response to a first voltage applied to the magnetoelectric device.

3. The magnetoelectric device as claimed in claim 2, wherein the magnetization orientation of the free magnetic layer structure is variable from the second direction to the first direction in response to a second voltage applied to the magnetoelectric device, the first voltage and the second voltage having a same polarity.

4. The magnetoelectric device as claimed in claim 1, wherein the magnetization orientation of the free magnetic layer structure is variable between a first direction and a second direction different from the first direction in response to a voltage applied to the magnetoelectric device without the free magnetic layer structure being subjected to at least one of spin-transfer torque effect or a magnetic field.

5. The magnetoelectric device as claimed in claim 1, wherein a magnetic moment of the free magnetic layer structure is more than a magnetic moment of the coupling magnetic layer structure.

6. The magnetoelectric device as claimed in claim 1, wherein the synthetic antiferromagnetic layer structure further comprises a non-magnetic spacer layer arranged in between the free magnetic layer structure and the coupling magnetic layer structure.

7. The magnetoelectric device as claimed in claim 1, further comprising a pinning magnetic layer structure configured to pin the fixed magnetization orientation of the reference magnetic layer structure.

8. The magnetoelectric device as claimed in claim 7, wherein the pinning magnetic layer structure comprises a magnetic layer antiferromagnetically coupled to the reference magnetic layer structure.

9. The magnetoelectric device as claimed in claim 8, wherein the pinning magnetic layer structure further comprises an antiferromagnetic layer associated with the magnetic layer.

10. The magnetoelectric device as claimed in claim 7, wherein the pinning magnetic layer structure comprises:

a first magnetic layer and a second magnetic layer antiferromagnetically coupled to each other, the first magnetic layer being arranged between the reference magnetic layer structure and the second magnetic layer, wherein the first magnetic layer is antiferromagnetically coupled to the reference magnetic layer structure.

11. The magnetoelectric device as claimed in claim 10, wherein the pinning magnetic layer structure further comprises an antiferromagnetic layer associated with the second magnetic layer.

12. The magnetoelectric device as claimed in claim 1, further comprising a magnesium oxide layer in contact with the coupling magnetic layer structure.

13. The magnetoelectric device as claimed in claim 1, wherein the magnetoelectric device has perpendicular magnetic anisotropy.

14. A method for forming a magnetoelectric device, the method comprising:

forming a reference magnetic layer structure having a fixed magnetization orientation;

forming a synthetic antiferromagnetic layer structure comprising a free magnetic layer structure and a coupling magnetic layer structure antiferromagnetically coupled to each other, each of the free magnetic layer structure and the coupling magnetic layer structure having a magnetization orientation that is variable; and

forming an insulating layer arranged in between the free magnetic layer structure and the reference magnetic layer structure;

wherein the insulating layer is configured to prevent the free magnetic layer structure being subjected to spin-transfer torque effect; and

wherein the reference magnetic layer structure and the synthetic antiferromagnetic layer structure are arranged one over the other.

15. The method as claimed in claim 14, wherein a magnetic moment of the free magnetic layer structure is more than a magnetic moment of the coupling magnetic layer structure.