Nonvolatile memory device and driving method thereof

• US 9,601,208 B2
• Filed: 02/26/2016
• Issued: 03/21/2017
• Est. Priority Date: 11/08/2011
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Changhyun
• Primary Examiner(s): Le, Vu
• Application Number:
  US15/055,058
• Publication Number:
  US 20160180937A1
• Time in Patent Office: 389 Days
• Field of Search: 365/185.17, 365/185.02, 365/185.11, 365/185.24
• US Class Current: 1/1
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 16/3459 Circuits or methods to verify correct programming of nonvolatile memory cells

Abstract

According to example embodiments, a nonvolatile memory device includes a plurality of strings having a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the serially-connected selection transistors. A control logic is configured to perform a program operation for setting a threshold voltage of at least one of the serially-connected selection transistors.

Claims

1. A nonvolatile memory device, comprising:

a plurality of strings in a direction perpendicular to a substrate, wherein each string includes at least one string selection transistor, a plurality of memory cells arranged in a plurality of word lines and a plurality of bit lines, and at least one ground selection transistor in series; and

a control logic configured to perform a program operation for setting a threshold voltage of at least one of the at least one string selection transistor and the at least one ground selection transistor,

wherein the program operation is performed when an erase cycle number reaches a reference value.

2. The nonvolatile memory device of claim 1, wherein the at least one string selection transistor includes a first string selection transistor and a second string transistor,

at least one threshold voltage of the first string selection transistor and the second string transistor is set in the program operation.

3. The nonvolatile memory device of claim 2, wherein a first threshold voltage of the first string selection transistor and a second threshold voltage of the second string transistor are different.

4. The nonvolatile memory device of claim 3, wherein

the first threshold voltage of the first string selection transistor is greater than the second threshold voltage of the second string transistor, and

the first string selection transistor is adjacent to a corresponding bit line.

5. The nonvolatile memory device of claim 1, wherein

the at least one ground selection transistor includes a first ground selection transistor and a second ground transistor, and

at least one threshold voltage of the first ground selection transistor and the second ground transistor is set in the program operation.

6. The nonvolatile memory device of claim 5, wherein a first threshold voltage of the first ground selection transistor and a second threshold voltage of the second ground transistor are different.

7. The nonvolatile memory device of claim 1, wherein at least two of the plurality of strings are connected to one bit line of the plurality of bit lines.

8. The nonvolatile memory device of claim 1, wherein the at least one string selection transistor or the at least one ground selection transistor are formed at least one transistor identical to each of the plurality of memory cells.

9. The nonvolatile memory device of claim 1, wherein at least one of the at least string selection transistor and the at least ground selection transistor includes an enhancement type transistor or a depletion type transistor.

10. The nonvolatile memory device of claim 1, further comprising:

at least one first dummy cell connected between the at least string selection transistor and the plurality of word lines, or at least one second dummy cell connected between the plurality of word lines and the at least one ground selection transistor.

11. A storage device, comprising:

a plurality of strings including a plurality of serially-connected selection transistors and a plurality of memory cells connected in series to one end of the plurality of serially-connected selection transistors,

at least two strings of the plurality of strings being connected to a bit line, each of the at least two strings of the plurality of strings including a first string and a second string,

the first string including a first enhancement type selection transistor connected to the bit line and a first depletion type selection transistor connected to the first enhancement type selection transistor,

the second string including a second depletion type selection transistor connected to the bit line and a second enhancement type selection transistor connected to the second depletion type selection transistor,

each of the first and second enhancement type selection transistors and the first and second depletion type selection transistors including at least two selection transistors having a structure that is the same as a structure of each of the plurality of memory cells; and

a controller configured to perform a program operation for setting a threshold voltage of at least one of the plurality of serially-connected selection transistors,

wherein the program operation is performed when an erase cycle number reaches a reference value.

12. The storage device of claim 11, wherein at least one of the at least two selection transistors is configured to be programmed by the controller.

13. The storage device of claim 11, wherein the controller is configured to operate so when one of the memory cells is read, a first read pass voltage provided to at least one unprogrammed selection transistor is equal to a second read pass voltage provided to the remaining memory cells except the memory cell to be read, the at least one unprogrammed selection transistor being adjacent to the programmed selection transistor.

14. The storage device of claim 13, wherein the plurality of strings each include a ground selection transistor, and the plurality of strings include the plurality of memory cells connected between the ground selection transistor and the one end of the plurality of serially-connected selection transistors.

15. The storage device of claim 13, wherein the plurality of memory cells are stacked on top of each other between the ground selection transistor and the serially connected selection transistors.

16. The storage device of claim 13, wherein a structure of the ground selection transistor is different than the structure of the plurality of memory cells.

17. The storage device of claim 13, wherein the controller is configured to apply a ground voltage to the programmed selection transistor when the one of the memory cells is read.

18. The storage device of claim 13, wherein the controller is configured to apply a precharge voltage to the bit line when the one of the memory cells is read.

19. A method for operating a storage device comprising at least one nonvolatile memory device having a plurality of strings in a direction perpendicular to a substrate, wherein each string includes at least one selection transistor, a plurality of memory cells arranged in a plurality of word lines and a plurality of bit lines, and at least one ground selection transistor in series;

and a memory controller configured to control the at least one nonvolatile memory, device, the method comprising;

generating a program command when an erase cycle number reaches a reference value; and

setting a threshold voltage of at least one of the at least one string selection transistor and the at least one ground selection transistor.

20. The method of claim 19, the setting the threshold voltage comprising performing a program operation of the at least one of the at least one string selection transistor and the at least one ground selection transistor in response to the program command.