Thermal resistance measuring method and thermal resistance measuring device

• US 9,601,404 B2
• Filed: 06/11/2014
• Issued: 03/21/2017
• Est. Priority Date: 06/27/2013
• Status: Expired due to Fees

• Current Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Original Assignee: Fuji Electric Company Limited (Fuji Electric Systems Company Limited)
• Inventors: Hinata, Yuichiro, Miyanagi, Toshiyuki
• Primary Examiner(s): KAPLAN VERBITSKY, GAIL
• Application Number:
  US14/302,206
• Publication Number:
  US 20150003492A1
• Time in Patent Office: 1,014 Days
• US Class Current: 1/1
• CPC Class Codes: G01R 31/2619 for measuring thermal properties thereof
• CPC Class Codes: G01R 31/2628 for measuring thermal properties thereof
• CPC Class Codes: H01L 23/34 Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements thermal treatment apparatus H01L21/00
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A temperature of a semiconductor element is measured based on a temperature coefficient of a voltage between the first electrode and the second electrode when no heat is generated when causing a constant current of an extent such that the semiconductor element does not generate heat to be input wherein current is caused to flow from a third electrode to a second electrode in accordance with voltage applied between a first electrode and the second electrode. Also, a constant current such that the semiconductor element generates heat is input into the third electrode, with voltage applied between the first electrode and second electrode of the semiconductor element kept constant, and power is measured based on the current such that the semiconductor element generates heat and on voltage when heat is generated between the third electrode and second electrode when the semiconductor element generates heat.

Claims

1. A thermal resistance measuring method, comprising:

measuring an exterior temperature of a semiconductor device housing a semiconductor element wherein current is caused to flow from a third electrode of the semiconductor element to a second electrode of the semiconductor element in accordance with a voltage applied between a first electrode of the semiconductor element and the second electrode;

inputting a constant current such that the semiconductor element does not generate heat, measuring a second voltage between the first electrode and second electrode, which is controlled so that a first voltage between the third electrode and second electrode is constant, and calculating the element temperature of the semiconductor element based on the second voltage and on a temperature coefficient relating to the second voltage;

causing a constant current such that the semiconductor element generates heat to be input between the third electrode and second electrode, with a third voltage applied between the first electrode and second electrode kept constant;

calculating a power based on the current such that the semiconductor element generates heat, and on a fourth voltage between the third electrode and second electrode when the semiconductor element generates heat;

inputting a constant current of an extent such that the semiconductor element does not generate heat, measuring a fifth voltage between the first electrode and second electrode, which is controlled so that the first voltage between the third electrode and second electrode is constant, and calculating the element temperature of the semiconductor element based on the fifth voltage and on a temperature coefficient relating to the fifth voltage;

measuring the exterior temperature of the semiconductor element after heat is generated; and

calculating a thermal resistance value of the semiconductor element based on the amount of change in the exterior temperature and the amount of change in the element temperature of the semiconductor element before and after heat is generated, and on the power.

2. The thermal resistance measuring method according to claim 1, wherein

the semiconductor element is a field-effect transistor or an insulated gate bipolar transistor.

3. The thermal resistance measuring method according to claim 1, wherein

the semiconductor element comprises silicon carbide or gallium nitride.

4. The thermal resistance measuring method according to claim 1, wherein

calculating the element temperature of the semiconductor element based on the second voltage and on the temperature coefficient relating to the second voltage comprises dividing the measured second voltage by the temperature coefficient.

5. The thermal resistance measuring method according to claim 1, wherein

the exterior temperature of the semiconductor device is measured at a back surface of the semiconductor element.

6. The thermal resistance measuring method according to claim 5, wherein

the exterior temperature of the semiconductor device is measured using a thermocouple or an infrared camera.

7. The thermal resistance measuring method according to claim 1, wherein

the power is calculated from the product of the current causing the semiconductor element to generate heat and the fourth voltage.

8. The thermal resistance measuring method according to claim 7, wherein

the fourth voltage is the average voltage from the start of inputting to the end of inputting the current causing the semiconductor element to generate heat between the third electrode and second electrode.

9. The thermal resistance measuring method according to claim 7, wherein

the fourth voltage is the voltage at the point at which half of the time of inputting the current causing the semiconductor element to generate heat between the third electrode and second electrode elapses.

10. The thermal resistance measuring method according to claim 1, wherein

the thermal resistance value is calculated by dividing the difference between the amount of change in the exterior temperature and the amount of change in the element temperature, before and after the semiconductor element generates heat, by the power.

11. A thermal resistance measuring device, comprising:

an exterior temperature measuring unit configured to measure an exterior temperature of a semiconductor device housing a semiconductor element, before and after a generation of heat by the semiconductor element in response to current caused to flow from a third electrode of the semiconductor element to a second electrode of the semiconductor element in accordance with a voltage applied between a first electrode of the semiconductor element and the second electrode;

a first measuring unit configured to measure a voltage between the first electrode and second electrode when no heat is generated, before and after the semiconductor element generates heat, and to cause a constant current of an extent such that the semiconductor element does not generate heat to be input, which is controlled so that voltage between the third electrode and second electrode is constant;

a second measuring unit configured to measure a voltage between the third electrode and second electrode when heat is generated, to cause a constant current such that the semiconductor element generates heat to be input between the third electrode and second electrode, with a voltage applied between the first electrode and second electrode kept constant; and

a calculation unit configured to calculate an element temperature of the semiconductor element based on the voltage when no heat is generated and on a temperature coefficient relating to the voltage when no heat is generated, to calculate a power based on the current such that the semiconductor element generates heat and on the voltage when heat is generated, and to calculate a thermal resistance value of the semiconductor element based on the amount of change in the exterior temperature and the amount of change in the element temperature of the semiconductor element before and after heat is generated, and on the power.