Semiconductor device and manufacturing method thereof
First Claim
1. A method for manufacturing a semiconductor device, the method comprising the steps of:
- forming an insulating layer over a substrate;
performing a plasma treatment on the insulating layer;
forming a stacked oxide semiconductor film over the insulating layer, the stacked oxide semiconductor film comprising a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film; and
forming an oxide film comprising gallium oxide over the stacked oxide semiconductor film,wherein the first oxide semiconductor film includes crystals which are c-axis aligned,wherein the second oxide semiconductor film includes crystals which are c-axis aligned, andwherein the oxide film includes one or more elements selected from constituent metal element of the second oxide semiconductor film.
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Accused Products
Abstract
Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm and less than or equal to 15 nm is formed over a gate insulating layer. First heat treatment is performed so that crystal growth from a surface of the first oxide semiconductor film to the inside thereof is caused, whereby a first crystal layer is formed. A second oxide semiconductor film with a thickness greater than that of the first oxide semiconductor film is formed over the first crystal layer. Second heat treatment is performed so that crystal growth from the first crystal layer to a surface of the second oxide semiconductor film is caused, whereby a second crystal layer is formed. Further, oxygen doping treatment is performed on the second crystal layer.
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Citations
16 Claims
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1. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming an insulating layer over a substrate; performing a plasma treatment on the insulating layer; forming a stacked oxide semiconductor film over the insulating layer, the stacked oxide semiconductor film comprising a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film; and forming an oxide film comprising gallium oxide over the stacked oxide semiconductor film, wherein the first oxide semiconductor film includes crystals which are c-axis aligned, wherein the second oxide semiconductor film includes crystals which are c-axis aligned, and wherein the oxide film includes one or more elements selected from constituent metal element of the second oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, the method comprising the steps of:
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forming a gate electrode over a substrate; forming a gate insulating layer over the gate electrode; forming a stacked oxide semiconductor film over the gate insulating layer, the stacked oxide semiconductor film comprising a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film; performing a plasma treatment on the stacked oxide semiconductor film; forming a source electrode and a drain electrode over the stacked oxide semiconductor film; and forming an oxide film comprising gallium oxide over the stacked oxide semiconductor film, the source electrode and the drain electrode, wherein the first oxide semiconductor film includes crystals which are c-axis aligned, wherein the second oxide semiconductor film includes crystals which are c-axis aligned, and wherein the oxide film includes one or more elements selected from constituent metal element of the second oxide semiconductor film. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification