Vertical solid-state transducers having backside terminals and associated systems and methods

• US 9,601,675 B2
• Filed: 10/29/2015
• Issued: 03/21/2017
• Est. Priority Date: 08/25/2011
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Odnoblyudov, Vladimir, Schubert, Martin F.
• Primary Examiner(s): PARENDO, KEVIN A
• Application Number:
  US14/926,276
• Publication Number:
  US 20160049565A1
• Time in Patent Office: 509 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/08 with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body H01L27/15 takes precedence
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/501 characterised by the materials, e.g. binder
• CPC Class Codes: H01L 33/504 Elements with two or more wavelength conversion materials
• CPC Class Codes: H01L 33/58 Optical field-shaping elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
• CPC Class Codes: H01L 33/647 the elements conducting electric current to or from the semiconductor body

Abstract

Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.

Claims

1. A solid-state transducer (SST) assembly comprising:

an SST having a first side and a second side opposite the first side, the SST having a transducer structure, a first contact and a second contact, wherein the first and second contacts are configured to be electrically accessible from the first side, wherein the first contact includes a first isolated portion covered by a dielectric material and a first exposed portion not covered by the dielectric material, and wherein the second contact includes a second isolated portion covered by the dielectric material and a second exposed portion not covered by the dielectric material;

a conductive carrier substrate on the first side of the SST, the conductive carrier substrate having a first terminal electrically coupled to the first contact and a second terminal electrically coupled to the second contact;

a first isolating via extending through the conductive carrier substrate to the dielectric material, the first isolating via surrounding the first exposed portion of the first contact and defining the first terminal;

a second isolating via extending through the conductive carrier substrate to the dielectric material, the second isolating via surrounding the second exposed portion of the second contact and defining the second terminal;

a separator positioned proximate to the transducer structure and projecting through the transducer structure toward the second side; and

an optical element positioned on the second side, wherein the separator is positioned proximate to the optical element.

2. The SST assembly of claim 1 wherein the separator comprises:

a dielectric isolator extending along a sidewall proximate to the SST; and

at least one metal material on the dielectric isolator.

3. The SST assembly of claim 1 wherein the optical element comprises a converter element and a cover element, and wherein the separator acts as a barrier between the converter element and the cover element.

4. The SST assembly of claim 1 wherein the optical element comprises a first converter element configured to emit a first color of light and a second converter element configured to emit a second color of light different from the first color of light.

5. The SST assembly of claim 1 wherein:

the transducer structure comprises a first semiconductor material at a first side of the transducer structure, a second semiconductor material at a second side opposite the first side, and an active region between the first and second semiconductor materials, wherein the first and second sides of the transducer structure are proximate the corresponding first and second sides of the SST;

the second contact comprises

a plurality of buried contact elements extending from the first side of the transducer structure into the second semiconductor material, wherein the plurality of buried contact elements is electrically coupled to the second semiconductor material and is electrically isolated from the active region, the first semiconductor material, and the first contact; and

a plurality of conductive lines on the first side of the SST assembly between the buried contact elements, wherein the conductive lines are on an underlying dielectric layer that electrically isolates the conductive lines from the underlying first contact and the first semiconductor material, and wherein the conductive lines and the buried contact elements define the second contacts.

6. The SST assembly of claim 1, further comprising:

a dielectric layer separating the first and second contacts from the conductive carrier substrate.

7. The SST assembly of claim 1 wherein the SST is configured to emit electromagnetic radiation in at least one of the ultraviolet spectrum, the visible spectrum, and the infrared spectrum.