Mechanical resonating structures including a temperature compensation structure

• US 9,602,074 B2
• Filed: 12/09/2014
• Issued: 03/21/2017
• Est. Priority Date: 12/17/2008
• Status: Active Grant

• Current Assignee: Analog Devices, Inc.
• Original Assignee: Analog Devices, Inc.
• Inventors: Chen, David M., Kuypers, Jan H., Gaidarzhy, Alexei, Zolfagharkhani, Guiti
• Primary Examiner(s): ROSENAU, DEREK JOHN
• Application Number:
  US14/565,261
• Publication Number:
  US 20150091412A1
• Time in Patent Office: 833 Days
• Field of Search: 310/313.R, 310/313.A, 310/313.B, 310/313.C, 310/313.D, 310/346
• US Class Current: 1/1
• CPC Class Codes: H03H 9/02102 of temperature influence cutting angles H03H9/02015
• CPC Class Codes: H03H 9/02228 Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
• CPC Class Codes: H03H 9/02448 of temperature influence
• CPC Class Codes: H03H 9/02574 of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
• CPC Class Codes: H03H 9/02834 of temperature influence cut angles H03H9/02543

Abstract

Mechanical resonating structures are described, as well as related devices and methods. The mechanical resonating structures may have a compensating structure for compensating temperature variations.

Claims

1. A device, comprising:

a substrate having a cavity formed therein; and

a mechanical resonating structure suspended above the cavity and coupled to the substrate by an anchor, the mechanical resonating structure comprising

a multi-layer active layer comprising a piezoelectric functional layer and a non-functional layer; and

a temperature compensating structure coupled to the active layer and comprising first, second and third layers, the second layer being between the first and third layers,

wherein the first and third layers of the temperature compensating structure are formed of silicon oxide and have a stiffness that increases with increasing temperature over a temperature range, and wherein the second layer of the temperature compensating structure is formed of a semiconductor material.

2. The device of claim 1, wherein the silicon oxide of the first layer of the temperature compensating structure is a thermal silicon oxide.

3. The device of claim 1, wherein a ratio of a thickness of the active layer to a combined thickness of the first and third layers of the temperature compensating structure is between 1:

1 and 1;

200.

4. The device of claim 3, wherein the ratio of the thickness of the active layer to the combined thickness of the first and third layers of the temperature compensating structure is between 1:

1 and 1;

10.

5. The device of claim 2, wherein the second layer of the temperature compensating structure comprises single crystal silicon.

6. The device of claim 1, wherein the mechanical resonating structure is configured to support Lamb waves.

7. The device of claim 1, wherein the mechanical resonating structure comprises a first electrode and a second electrode, wherein the piezoelectric functional layer of the multi-layer active layer is between the first and second electrodes.

8. The device of claim 7, wherein the first electrode forms at least part of an interdigitated electrode.

9. The device of claim 1, wherein the temperature compensating structure provides the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 10 ppm/K over a temperature range from −

40°

C. to 85°

C.

10. A device, comprising:

a mechanical resonating structure suspended above a cavity in a substrate and coupled to the substrate by an anchor, the mechanical resonating structure comprising

an active layer of a piezoelectric material;

a crystal orientation layer;

an electrode disposed between the active layer and the crystal orientation layer; and

a temperature compensating structure coupled to the active layer such that the crystal orientation layer is between the electrode and the temperature compensating structure,

wherein the temperature compensating structure comprises first, second and third layers, the second layer being between the first and third layers, wherein the first and third layers of the temperature compensating structure are formed of silicon oxide and have a stiffness that increases with increasing temperature over a temperature range, and wherein the second layer of the temperature compensating structure is formed of a semiconductor material.

11. The device of claim 10, wherein the silicon oxide of the first layer of the temperature compensating structure is a thermal silicon oxide.

12. The device of claim 11, wherein the second layer of the temperature compensating structure comprises single crystal silicon.

13. The device of claim 12, wherein a ratio of a thickness of the active layer to a combined thickness of the first and third layers of the temperature compensating structure is between 1:

1 and 1;

10.

14. The device of claim 10, wherein the temperature compensating structure provides the mechanical resonating structure with a temperature coefficient of frequency having an absolute value less than 10 ppm/K over a temperature range from −

40°

C. to 85°

C.