Methods of forming metal silicides
First Claim
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1. A method of forming a metal silicide, comprising:
- depositing an interface layer on exposed silicon regions of a substrate, the interface layer comprising a first silicide forming metal and a non-silicide forming element;
depositing a metal oxide layer over the interface layer, wherein the metal oxide layer comprises a second silicide forming metal; and
heating the substrate to form the metal silicide beneath the interface layer, the metal silicide comprising silicon from the formerly exposed silicon regions, first silicide forming metal from the interface layer, and second silicide forming metal from the metal oxide layer,wherein depositing the interface layer comprises a plurality of cycles of a vapor deposition process, each cycle of the plurality of cycles comprising alternately and sequentially contacting the surface of the substrate with a first vapor phase precursor comprising the first silicide forming metal and a second vapor phase precursor comprising the non-silicide forming element, wherein the first vapor phase precursor reacts with the second vapor phase precursor.
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Abstract
A method of forming a metal silicide can include depositing an interface layer on exposed silicon regions of a substrate, where the interface layer includes a silicide forming metal and a non-silicide forming element. The method can include depositing a metal oxide layer over the interface layer, where the metal oxide layer includes a second silicide forming metal. The substrate can be subsequently heated to form the metal silicide beneath the interface layer, using silicon from the exposed silicon regions, the first silicide forming metal of the interface layer and the second silicide forming metal of the metal oxide layer.
312 Citations
22 Claims
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1. A method of forming a metal silicide, comprising:
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depositing an interface layer on exposed silicon regions of a substrate, the interface layer comprising a first silicide forming metal and a non-silicide forming element; depositing a metal oxide layer over the interface layer, wherein the metal oxide layer comprises a second silicide forming metal; and heating the substrate to form the metal silicide beneath the interface layer, the metal silicide comprising silicon from the formerly exposed silicon regions, first silicide forming metal from the interface layer, and second silicide forming metal from the metal oxide layer, wherein depositing the interface layer comprises a plurality of cycles of a vapor deposition process, each cycle of the plurality of cycles comprising alternately and sequentially contacting the surface of the substrate with a first vapor phase precursor comprising the first silicide forming metal and a second vapor phase precursor comprising the non-silicide forming element, wherein the first vapor phase precursor reacts with the second vapor phase precursor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of forming a metal silicide, comprising:
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depositing an interface layer on exposed silicon regions of a substrate, the interface layer comprising a first silicide forming metal and a non-silicide forming element; depositing a metal oxide layer over the interface layer, wherein the metal oxide layer comprises a second silicide forming metal; and heating the substrate to form the metal silicide beneath the interface layer, the metal silicide comprising silicon from the formerly exposed silicon regions, first silicide forming metal from the interface layer, and second silicide forming metal from the metal oxide layer, wherein depositing the interface layer comprises a plurality of super-cycles, each super-cycle comprising; a first sub-cycle comprising exposing the substrate to a first vapor phase precursor comprising the first silicide forming metal and a first reducing agent; and a second sub-cycle comprising exposing the substrate to a second vapor phase precursor comprising the non-silicide forming element and a second reducing agent. - View Dependent Claims (11, 12, 13)
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14. A method of forming metal silicide, comprising:
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depositing an interface layer over at least one exposed silicon region of a substrate, wherein depositing the interface layer comprises a plurality of atomic layer deposition cycles, each of the plurality of atomic layer deposition cycles comprising; contacting a surface of the exposed silicon regions with a first vapor phase precursor comprising a first silicide forming metal to form a layer of first species on the surface of the substrate; and contacting the first species on the surface of the substrate with a second vapor phase precursor comprising a non-silicide forming element; depositing a metal oxide layer over the interface layer, wherein the metal oxide layer comprises a second silicide forming metal; and forming the metal silicide beneath the interface layer, the metal silicide comprising silicon of the at least one formerly exposed silicon regions, first silicide forming metal of the interface layer and second silicide forming metal of the metal oxide layer. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22)
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Specification