Image pickup unit and image pickup display system

• US 9,608,120 B2
• Filed: 02/27/2014
• Issued: 03/28/2017
• Est. Priority Date: 03/26/2013
• Status: Expired due to Fees

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Yamada, Yasuhiro
• Primary Examiner(s): Kim, Kiho
• Application Number:
  US14/778,950
• Publication Number:
  US 20160049523A1
• Time in Patent Office: 1,125 Days
• US Class Current: 1/1
• CPC Class Codes: G01N 23/04 and forming images of the material
• CPC Class Codes: H01L 27/1237 with a different composition, shape, layout or thickness of the gate insulator in different devices
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78648 arranged on opposing sides of the channel
• CPC Class Codes: H01L 29/78672 Polycrystalline or microcrystalline silicon transistor

Abstract

A semiconductor device including a substrate, at least one gate electrode, at least two silicon oxide layers comprising a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than or equal to a thickness of the second silicon oxide layer, and a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer. Also, an image pick-up device and a radiation imaging device including the semiconductor device.

Claims

1. A semiconductor device, comprising:

a substrate;

at least one gate electrode;

at least two silicon oxide layers that comprise a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than a thickness of the second silicon oxide layer; and

a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer.

2. The semiconductor device of claim 1, wherein the at least one gate electrode comprises a first gate electrode and a second gate electrode, wherein the first gate electrode is nearer to the substrate than the second gate electrode.

3. The semiconductor device of claim 2, wherein the semiconductor device is a laminated structure, wherein the substrate, the first gate electrode, the first silicon oxide layer, the semiconductor layer, a second insulating layer, and the second gate electrode are arranged in this order.

4. The semiconductor device of claim 2, wherein a first portion of the first silicon oxide layer is in physical contact with the semiconductor layer and a second portion of the first silicon oxide layer is in physical contact with the second silicon oxide layer.

5. The semiconductor device of claim 2, wherein the semiconductor layer is disposed between the first gate electrode and the second gate electrode.

6. The semiconductor device of claim 5, wherein a first capacitance between the first gate electrode and the semiconductor layer is less than or equal to a second capacitance between the second gate electrode and the semiconductor layer.

7. The semiconductor device of claim 1, wherein the at least one gate electrode comprises only a first gate electrode.

8. The semiconductor device of claim 7, wherein the second silicon oxide layer is nearer to the substrate than the first gate electrode.

9. The semiconductor device of claim 8, wherein the semiconductor device is a laminated structure, wherein the substrate, the first silicon oxide layer, the semiconductor layer, a second insulating layer, and the first gate electrode are arranged in this order.

10. The semiconductor device of claim 7, wherein the first gate electrode is nearer to the substrate than the first silicon oxide layer.

11. The semiconductor device of claim 10, wherein the semiconductor device is a laminated structure, wherein the substrate, the first gate electrode, the first silicon oxide layer, the semiconductor layer, and a second insulating layer, are arranged in this order.

12. The semiconductor device of claim 1, wherein the first silicon oxide layer is a portion of a first insulating layer, wherein the first insulating layer comprises a first silicon nitride layer.

13. The semiconductor device of claim 12, wherein the second silicon oxide layer is a portion of a second insulating layer, wherein the second insulating layer comprises a second silicon nitride layer.

14. The semiconductor device of claim 1, wherein the second silicon oxide layer is a portion of an insulating layer, wherein the insulating layer comprises a silicon nitride layer.

15. The semiconductor device of claim 1, wherein the semiconductor layer comprises a low temperature polysilicon material.

16. The semiconductor device of claim 1, wherein the semiconductor layer comprises microcrystal silicon.

17. The semiconductor device of claim 1, wherein the at least one gate electrode comprises at least one material selected from the group consisting of molybdenum, titanium, aluminum, tungsten, and chromium.

18. An image pick-up device, comprising:

a plurality of pixels, wherein each pixel of the plurality of pixels comprises at least one semiconductor device, wherein the semiconductor device comprises;

a substrate;

at least one gate electrode;

at least two silicon oxide layers that comprises a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than a thickness of the second silicon oxide layer; and

a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer.

19. The image pick-up device of claim 18, wherein the at least one gate electrode comprises a first gate electrode and a second gate electrode, wherein the first gate electrode is nearer to the substrate than the second gate electrode.

20. A radiation imaging apparatus, comprising:

a radiation source configured to emit radiation; and

an image pick-up device configured to receive and detect at least a portion of the emitted radiation, wherein the image pick-up device comprises a plurality of pixels, wherein each pixel of the plurality of pixels comprises at least one semiconductor device, and wherein the semiconductor device comprises;

a substrate;

at least one gate electrode;

at least two silicon oxide layers comprises a first silicon oxide layer and a second silicon oxide layer, wherein the first silicon oxide layer is nearer to the substrate than the second silicon oxide layer, and wherein a thickness of the first silicon oxide layer is greater than a thickness of the second silicon oxide layer; and

a semiconductor layer disposed between at least a portion of the first silicon oxide layer and at least a portion of the second silicon oxide layer.