Method for manufacturing semiconductor device
First Claim
1. A semiconductor device comprising:
- an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface;
a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer;
a gate insulating layer over the island-shaped oxide semiconductor layer;
a gate electrode layer over the gate insulating layer;
an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer;
a sidewall insulating layer over the gate insulating layer, the sidewall insulating layer covering a side surface of the gate electrode layer and a side surface of the insulating layer;
a conductive layer over the island-shaped oxide semiconductor layer, the gate insulating layer, the gate electrode layer, the insulating layer, and the sidewall insulating layer; and
an interlayer insulating layer over the source electrode layer and the drain electrode layer,wherein a source region of the island-shaped oxide semiconductor layer includes a dopant,wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer,wherein a concentration of chlorine in the region is lower than or equal to 3.4×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 4.5×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region is lower than or equal to 7.5×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry, andwherein a concentration of fluorine in the region is lower than or equal to 8.9×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry.
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Abstract
In a semiconductor device including a transistor in which an oxide semiconductor layer, a gate insulating layer, and a gate electrode layer on side surfaces of which sidewall insulating layers are provided are stacked in this order, a source electrode layer and a drain electrode layer are provided in contact with the oxide semiconductor layer and the sidewall insulating layers. In a process for manufacturing the semiconductor device, a conductive layer and an interlayer insulating layer are stacked to cover the oxide semiconductor layer, the sidewall insulating layers, and the gate electrode layer. Then, parts of the interlayer insulating layer and the conductive layer over the gate electrode layer are removed by a chemical mechanical polishing method, so that a source electrode layer and a drain electrode layer are formed. Before formation of the gate insulating layer, cleaning treatment is performed on the oxide semiconductor layer.
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Citations
24 Claims
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1. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer; a sidewall insulating layer over the gate insulating layer, the sidewall insulating layer covering a side surface of the gate electrode layer and a side surface of the insulating layer; a conductive layer over the island-shaped oxide semiconductor layer, the gate insulating layer, the gate electrode layer, the insulating layer, and the sidewall insulating layer; and an interlayer insulating layer over the source electrode layer and the drain electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 3.4×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 4.5×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region is lower than or equal to 7.5×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry, andwherein a concentration of fluorine in the region is lower than or equal to 8.9×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer; a sidewall insulating layer over the gate insulating layer, the sidewall insulating layer covering a side surface of the gate electrode layer and a side surface of the insulating layer; a conductive layer over the island-shaped oxide semiconductor layer, the gate insulating layer, the gate electrode layer, the insulating layer, and the sidewall insulating layer; and an interlayer insulating layer over the source electrode layer and the drain electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 3.3×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 1.2×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region shows a noise level value when being measured by secondary ion mass spectrometry, and wherein a concentration of fluorine in the region is lower than or equal to 7.2×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer; a sidewall insulating layer over the gate insulating layer, the sidewall insulating layer covering a side surface of the gate electrode layer and a side surface of the insulating layer; a conductive layer over the island-shaped oxide semiconductor layer, the gate insulating layer, the gate electrode layer, the insulating layer, and the sidewall insulating layer; and an interlayer insulating layer over the source electrode layer and the drain electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 1.8×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 1.6×
1019 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region is lower than or equal to 8.8×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry, andwherein a concentration of carbon in the region is lower than or equal to 2.3×
1020 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; and an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 3.4×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 4.5×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region is lower than or equal to 7.5×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry, andwherein a concentration of fluorine in the region is lower than or equal to 8.9×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (20)
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21. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; and an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 3.3×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 1.2×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region shows a noise level value when being measured by secondary ion mass spectrometry, and wherein a concentration of fluorine in the region is lower than or equal to 7.2×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (22)
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23. A semiconductor device comprising:
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an island-shaped oxide semiconductor layer over an oxide insulating layer including an insulating surface; a source electrode layer and a drain electrode layer over the island-shaped oxide semiconductor layer; a gate insulating layer over the island-shaped oxide semiconductor layer; a gate electrode layer over the gate insulating layer; and an insulating layer over the gate electrode layer, the insulating layer overlapping the gate electrode layer, wherein a source region of the island-shaped oxide semiconductor layer includes a dopant, wherein the island-shaped oxide semiconductor layer includes a region in a vicinity of a top surface of the island-shaped oxide semiconductor layer, wherein a concentration of chlorine in the region is lower than or equal to 1.8×
1018 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of boron in the region is lower than or equal to 1.6×
1019 atoms/cm3 when being measured by secondary ion mass spectrometry,wherein a concentration of aluminum in the region is lower than or equal to 8.8×
1017 atoms/cm3 when being measured by secondary ion mass spectrometry, andwherein a concentration of carbon in the region is lower than or equal to 2.3×
1020 atoms/cm3 when being measured by secondary ion mass spectrometry. - View Dependent Claims (24)
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Specification