Materials, structures, and methods for optical and electrical III-nitride semiconductor devices
First Claim
1. An optical-electrical device comprising:
- a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes;
a substrate having a top surface and a bottom surface; and
a plurality of periods of a metallo-semiconductor on the top surface of the substrate,wherein each of the plurality of periods includes a first layer and a second layer,wherein the first layer is a metal material having a thickness of between about 15 nanometers (nm) and about 45 nm and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, andwherein the first layer is substantially lattice matched to the second layer.
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Abstract
The present invention provides materials, structures, and methods for III-nitride-based devices, including epitaxial and non-epitaxial structures useful for III-nitride devices including light emitting devices, laser diodes, transistors, detectors, sensors, and the like. In some embodiments, the present invention provides metallo-semiconductor and/or metallo-dielectric devices, structures, materials and methods of forming metallo-semiconductor and/or metallo-dielectric material structures for use in semiconductor devices, and more particularly for use in III-nitride based semiconductor devices. In some embodiments, the present invention includes materials, structures, and methods for improving the crystal quality of epitaxial materials grown on non-native substrates. In some embodiments, the present invention provides materials, structures, devices, and methods for acoustic wave devices and technology, including epitaxial and non-epitaxial piezoelectric materials and structures useful for acoustic wave devices. In some embodiments, the present invention provides metal-base transistor devices, structures, materials and methods of forming metal-base transistor material structures for use in semiconductor devices.
51 Citations
20 Claims
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1. An optical-electrical device comprising:
a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of periods of a metallo-semiconductor on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness of between about 15 nanometers (nm) and about 45 nm and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, and wherein the first layer is substantially lattice matched to the second layer. - View Dependent Claims (2, 3, 4, 5, 6)
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7. An optical-electrical device comprising:
a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of periods of a metallo-semiconductor on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, and wherein the first layer is substantially lattice matched to the second layer, wherein d1=m*λ
o/(2*n)−
PD, where m is an integer, n is an index of refraction of the semiconductor, λ
o/n is the wavelength of the light in the semiconductor, λ
o is the wavelength of the light in vacuum, and PD is the optical penetration depth of the light into the metal material if the thickness of the first layer is greater than the optical penetration depth and otherwise PD is the thickness of the first layer.- View Dependent Claims (20)
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8. An optical-electrical device comprising:
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a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of periods of a metallo-semiconductor on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, and wherein the first layer is substantially lattice matched to the second layer, wherein the optical-electrical device further includes; a metal-cap layer on the first layered structure, wherein the metal-cap layer includes a metal material; a III-nitride cap layer on the metal-cap layer, wherein the III-nitride cap layer includes at least one of the group consisting of AlN and GaN; and a semiconductor device on the III-nitride cap layer, wherein the semiconductor device includes a layer of N-type III-nitride material, a layer of P-type III-nitride material, and an active layer located between the layer of N-type III-nitride material and the layer of P-type III-nitride material, and wherein the active layer includes a plurality of quantum wells.
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9. An optical-electrical device comprising:
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a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of periods of a metallo-semiconductor on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, and wherein the first layer is substantially lattice matched to the second layer, wherein the optical-electrical device further includes; a semiconductor device on the first layered structure, wherein the semiconductor device includes a layer of N-type III-nitride material, a layer of P-type III-nitride material, and an active layer located between the layer of N-type III-nitride material and the layer of P-type III-nitride material, wherein the active layer includes a plurality of quantum wells; and a second layered structure on the semiconductor device, wherein the second layered structure includes a plurality of metallo-semiconductor periods, and wherein the active layer is positioned at an antinode of an optical cavity formed by the first and second layered structures.
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10. An optical-electrical device comprising:
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a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of periods of a metallo-semiconductor on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness and characterized by an optical penetration depth, and the second layer is a semiconductor having a thickness d1, and wherein the first layer is substantially lattice matched to the second layer, and wherein the optical-electrical device further includes; a second layered structure on the first layered structure, wherein the second layered structure includes a plurality of metallo-semiconductor periods, and wherein the first layered structure is reflective to 450-nm-wavelength light and partially transparent to 460-nm-wavelength light, and wherein the second layered structure is reflective to 460-nm-wavelength light.
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11. An optical-electrical device comprising:
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a first layered structure, wherein the first layered structure has a reflectivity at a wavelength of light used in the device, and wherein the first layered structure includes; a substrate having a top surface and a bottom surface; and a plurality of metallo-dielectric periods on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer is a metal material having a thickness and characterized by an optical penetration depth, and the second layer is a dielectric having a thickness d, and wherein the first layer is substantially lattice matched to the second layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. An optical-electrical device comprising:
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a substrate having a top surface and a bottom surface; and a plurality of metallo-semiconductor periods on the top surface of the substrate, wherein each of the plurality of periods includes a first layer and a second layer, wherein the first layer of each period is a metal material having a thickness of between about 15 nanometers (nm) and about 45 nm and characterized by an optical penetration depth, and the second layer of each period is a semiconductor, wherein the first layer is substantially lattice matched to the second layer, and wherein the second layer has a thickness d1. - View Dependent Claims (19)
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Specification