Semiconductor light-emitting device

• US 9,608,161 B2
• Filed: 11/16/2015
• Issued: 03/28/2017
• Est. Priority Date: 12/23/2014
• Status: Active Grant

• Current Assignee: PlayNitride Display Co., Ltd.
• Original Assignee: PlayNitride Inc.
• Inventors: Wang, Shen-Jie, Li, Yu-Chu
• Primary Examiner(s): Au, Bac
• Assistant Examiner(s): NGUYEN, SOPHIA T
• Application Number:
  US14/941,683
• Publication Number:
  US 20160181472A1
• Time in Patent Office: 498 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.

Claims

1. A semiconductor light-emitting device, comprising:

an N-type semiconductor layer;

a plurality of P-type semiconductor layers;

a light-emitting layer, disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers; and

an indium gallium nitride (InGaN) contact layer, wherein the P-type semiconductor layers are disposed between the InGaN contact layer and the light-emitting layer,

wherein all the P-type semiconductor layers between the light-emitting layer and the InGaN contact layer comprise aluminum, and the P-type semiconductor layers further comprise;

a first P-type super lattice layer; and

a P-type indium aluminum gallium nitride (InAlGaN) layer, disposed between the light-emitting layer and the first P-type super lattice layer, wherein the first P-type super lattice layer is disposed between the P-type InAlGaN layer and the InGaN contact layer,

wherein the first P-type super lattice layer comprises a plurality of first P-type aluminum gallium nitride (AlGaN) layers and a plurality of second P-type AlGaN layers which are alternately stacked, and concentration of a P-type dopant in each of the first P-type AlGaN layers is different from concentration of a P-type dopant in each of the second P-type AlGaN layers,

wherein the concentration of the P-type dopant in each of the first P-type AlGaN layers falls within a range from 10¹⁹ atoms/cm³ to 10²⁰ atoms/cm³ and a mole ratio of aluminum therein falls within a range of 10˜

15%, and the concentration of the P-type dopant in each of the second P-type AlGaN layers falls within a range from 5×

10¹⁸ atoms/cm³ to 5×

10¹⁹ atoms/cm³ and a mole ratio of aluminum therein falls within a range of 1˜

5%,

wherein the P-type semiconductor layers further comprise a second P-type super lattice layer disposed between the first P-type super lattice layer and the InGaN contact layer, and concentration of aluminum in the second P-type super lattice layer is lower than concentration of aluminum in the first P-type super lattice layer,

wherein the second P-type super lattice layer comprises a plurality of third P-type AlGaN layers and a plurality of fourth P-type AlGaN layers which are alternately stacked, and concentration of a P-type dopant in each of the third P-type AlGaN layers is different from concentration of a P-type dopant in each of the fourth P-type AlGaN layers,

wherein the concentration of the P-type dopant in each of the third P-type AlGaN layers falls within a range from 10¹⁹ atoms/cm³ to 5×

10¹⁹ atoms/cm³ and a mole ratio of aluminum therein falls within a range of 3˜

8%, and the concentration of the P-type dopant in each of the fourth P-type AlGaN layers falls within a range from 5×

10¹⁸ atoms/cm³ to 10¹⁹ atoms/cm³ and a mole ratio of aluminum therein falls within a range of 1˜

3%, and

wherein a doping concentration in the contact layer is greater than a doping concentration in each of the plurality of p-type semiconductors layers.

2. The semiconductor light-emitting device according to claim 1, wherein the P-type dopant of the P-type semiconductor layers is a group IIA element dopant.

3. The semiconductor light-emitting device according to claim 2, wherein the group IIA element dopant is a magnesium (Mg) dopant.

4. The semiconductor light-emitting device according to claim 1, wherein the InGaN contact layer is an ohmic contact layer.

5. The semiconductor light-emitting device according to claim 1, further comprising:

a first electrode, electrically connected to the N-type semiconductor layer; and

a second electrode, disposed on the InGaN contact layer.

6. The semiconductor light-emitting device according to claim 1, wherein light emitted from the light-emitting layer comprises blue light, ultraviolet (UV) light or a combination thereof.