Semiconductor light-emitting device and method for fabricating the same

• US 9,608,169 B2
• Filed: 07/13/2015
• Issued: 03/28/2017
• Est. Priority Date: 10/15/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeong, Hwan Hee, Lee, Sang Youl, Song, June O, Oh, Tchang Hun, Choi, Hee Seok, Choi, Kwang Ki
• Primary Examiner(s): Tran, Tony
• Application Number:
  US14/797,262
• Publication Number:
  US 20150325750A1
• Time in Patent Office: 624 Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure.

Claims

1. A light emitting device, comprising:

an adhesion layer;

a light-emitting structure disposed on the adhesion layer, the light-emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, the light-emitting structure having an inclined side surface such that an area of a bottom surface of the light-emitting structure is larger than an area of a top surface of the light-emitting structure;

a first electrode including nickel, the first electrode disposed on the adhesion layer and disposed away from a side surface of the adhesion layer such that the first electrode is not beyond the bottom surface of the light-emitting structure;

a channel layer disposed on the adhesion layer, the channel layer having a first portion disposed between the adhesion layer and the light-emitting structure;

an insulating layer disposed from the channel layer to the top surface of the light-emitting structure through the inclined side surface of the light-emitting structure;

a second electrode disposed on the light-emitting structure;

a current blocking layer disposed between the adhesion layer and the light-emitting structure, the current blocking layer positioned corresponding to a position of the second electrode; and

an electrode layer disposed between the first electrode and the adhesion layer, the electrode layer including nickel or platinum, a bottom surface of the electrode layer including a recess such that a central portion of the bottom surface of the electrode layer is closer to the first electrode than an edge portion of the bottom surface, the central portion of the bottom surface of the electrode layer being positioned corresponding to the current blocking layer;

wherein the electrode layer comprises a flat bottom portion and at least two protrusions that protrude downwardly with respect to the second electrode on both sides of the flat bottom portion, wherein the adhesion layer comprises at least one protrusion that protrude upwardly with respect to the second electrode, and wherein at least one protrusion is disposed in the recess of the electrode layer; and

wherein the adhesion layer further comprises at least two second protrusions that protrude upwardly with respect to the second electrode, wherein the recess of the electrode layer is disposed between the at least two protrusions of the electrode layer, and wherein the at least two protrusions of the electrode layer are disposed between the at least two second protrusions of the adhesion layer.

2. The light emitting device according to claim 1, wherein the first electrode comprises an ohmic layer including nickel.

3. The light emitting device according to claim 2, wherein the electrode layer is formed in a multi-layer structure.

4. The light emitting device according to claim 2, wherein the electrode layer includes silver and platinum.

5. The light emitting device according to claim 2, wherein the ohmic layer of the first electrode is in contact with the channel layer.

6. The light emitting device according to claim 5, wherein the ohmic layer is in contact with a side surface of the channel layer.

7. The light emitting device according to claim 2, wherein the ohmic layer is spaced apart from the side surface of the adhesion layer.

8. The light emitting device according to claim 2, wherein an outer edge portion of the adhesion layer is in direct contact with a bottom surface of the channel layer.

9. The light emitting device according to claim 2, wherein the current blocking layer is surrounded by the ohmic layer.

10. The light emitting device according to claim 1, wherein the channel layer is disposed on an outer edge portion of the adhesion layer.

11. The light emitting device according to claim 10, wherein the channel layer includes at least one of a transparent oxide material, a transparent nitride material, or a transparent insulating material.

12. The light emitting device according to claim 10, wherein an inside surface of the outer edge portion of the adhesion layer is in direct contact with a side surface of the electrode layer.

13. The light emitting device according to claim 1, wherein side surfaces of the at least two protrusions contact the adhesion layer.

14. The light emitting device according to claim 1, wherein a top surface of an outer edge portion of the adhesion layer is higher than the flat bottom portion of the electrode layer.

15. The light emitting device according to claim 1, wherein a top surface f an outer edge portion of the adhesion layer is higher than the at least two protrusions of the electrode layer.

16. The light emitting device according to claim 15, wherein an inside surface of the outer edge portion of the adhesion layer is contact with the at least two protrusions of the electrode layer.

17. The light emitting device according to claim 1, wherein an outer most side surface of the first electrode is spaced apart from an outer most side surface of the adhesion layer.

18. The light emitting device according to claim 1, wherein an outer most side surface of the first electrode is spaced apart from an outer most side surface of the channel layer.

19. The light emitting device according to claim 1, wherein the adhesion layer further comprises at least two second protrusions that protrude upwardly with respect to the second electrode, and wherein the at least two second protrusions of the adhesion layer are in-contact with a bottom surface of the channel layer.