Film bulk acoustic wave resonator (FBAR) having stress-relief
First Claim
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1. A film bulk acoustic resonator (FBAR) structure, comprising:
- a substrate comprising a cavity having a plurality of sides;
a first electrode disposed over the cavity, the first electrode extending over at least one but not all of the plurality of sides of the cavity;
a piezoelectric layer disposed over at least a portion of the first electrode, and extending over the at least one of the sides having the first electrode extending thereover;
a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR; and
a bridge connecting the second electrode to one of the sides, wherein a space exists beneath the bridge.
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Abstract
An acoustic resonator structure comprises: a substrate having a cavity, which has a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; and a second electrode disposed over the piezoelectric layer, an overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR. The active area of the FBAR is completely suspended over the cavity.
164 Citations
38 Claims
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1. A film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity, the first electrode extending over at least one but not all of the plurality of sides of the cavity; a piezoelectric layer disposed over at least a portion of the first electrode, and extending over the at least one of the sides having the first electrode extending thereover; a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR; and a bridge connecting the second electrode to one of the sides, wherein a space exists beneath the bridge. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 13, 15)
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11. A film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate comprising a cavity having a plurality of sides, the plurality of sides providing a perimeter of the cavity; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over one of the sides; a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR, wherein the active area of the FBAR is completely suspended over the cavity; and a region where a gap exists between an end of the active area and a portion of the perimeter of the cavity. - View Dependent Claims (12, 14, 16, 17, 18, 19, 20)
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21. A film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode, the piezoelectric layer extending over an edge of the first electrode, and over at least one of the sides; a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR, wherein the active area of the FBAR is completely suspended over the cavity; and a bridge connecting the second electrode to one of the sides, wherein a space exists beneath the bridge. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A film bulk acoustic resonator (FBAR) structure, comprising:
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a substrate comprising a cavity having a plurality of sides; a first electrode disposed over the cavity; a piezoelectric layer disposed over a portion of the first electrode and extending over at least one of the sides; a second electrode disposed over the piezoelectric layer, a contacting overlap of the first electrode, the piezoelectric layer and the second electrode forming an active area of the FBAR, wherein the active area of the FBAR is completely suspended over the cavity; and a first bridge and a second bridge disposed in tandem with one another, and connecting the second electrode to one of the sides. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38)
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Specification