Film induced interface roughening and method of producing the same
First Claim
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1. A method for roughening a surface, comprising:
- layering a first material over a first surface of a second material having a first roughness, wherein the first material and the second material are different materials;
interdiffusing a portion of the first material and the second material at a predetermined temperature, wherein the interdiffusing results in formation of a eutectic alloy layer formed between the first material and the second material; and
removing the first material, wherein the removing results in a second surface of the eutectic alloy layer having a second roughness that is greater than the first roughness.
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Abstract
Various embodiments provide for a method for roughening a surface of a MEMs device or the surface of a CMOS surface. A first material can be deposited in a thin layer over a surface made of a second material. After heating, the first and second materials, they can partially melt and interdiffuse, forming an alloy. The first material can then be removed and the alloy is removed at the same time. The surface of the second material that is left behind has then been roughened due to the interdiffusion of the first and second materials.
41 Citations
28 Claims
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1. A method for roughening a surface, comprising:
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layering a first material over a first surface of a second material having a first roughness, wherein the first material and the second material are different materials; interdiffusing a portion of the first material and the second material at a predetermined temperature, wherein the interdiffusing results in formation of a eutectic alloy layer formed between the first material and the second material; and removing the first material, wherein the removing results in a second surface of the eutectic alloy layer having a second roughness that is greater than the first roughness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method, comprising:
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depositing a film of germanium over a silicon surface having a first roughness; heating the film of germanium and the silicon surface to a predetermined temperature, wherein a first portion of germanium and a second portion of silicon are interdiffused, forming a eutectic germanium-silicon alloy layer; and removing the film of germanium, wherein the removing results in exposing a surface having a second roughness that is greater than the first roughness. - View Dependent Claims (16, 17, 18, 19)
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20. A method to roughen a surface, comprising:
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depositing a film of aluminum over a silicon surface having a first roughness; heating the film of aluminum and the silicon surface to a predetermined temperature; annealing a first portion of the film of aluminum and a second portion of silicon wherein the first portion of aluminum and the second portion of silicon are interdiffused forming a eutectic aluminum-silicon alloy layer; and removing the film of aluminum, wherein the removing results in exposing a surface having a second roughness that is greater than the first roughness. - View Dependent Claims (21, 22)
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23. A method, comprising:
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depositing a film of aluminum over a germanium surface having a first roughness; heating the film of aluminum and the germanium surface to a defined temperature, wherein the heating results in a combination of a first portion of the film of aluminum and a second portion of germanium surface at a boundary layer between the film and the germanium surface melt to form a eutectic aluminum-germanium alloy; and removing the film of aluminum, wherein the removing results in exposure of a surface having a second roughness that is greater than the first roughness. - View Dependent Claims (24, 25, 26, 27, 28)
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Specification