Method and system for design of enhanced edge slope patterns for charged particle beam lithography
First Claim
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1. A method for fracturing or mask data preparation comprising:
- inputting an original set of shots for a multi-beam charged particle beam writer, wherein each multi-beam shot in the original set of shots comprises at least one beamlet; and
dosages for the original set of shots have not been corrected for long-range effects;
calculating an edge slope of a pattern produced on a resist-coated surface by the original set of shots;
identifying an edge of the pattern which has an edge slope below a target level;
increasing the dosage of a beamlet in a shot in the original set of shots to improve the edge slope of the edge that has the edge slope below the target level, wherein the improved edge slope is closer to, without exceeding, the target level, wherein the resist comprises a resist threshold, and wherein the edge slope comprises a slope of the dosage, at the resist threshold, with respect to a linear dimension perpendicular to the edge of the pattern; and
outputting a revised set of shots to the multi-beam charged particle beam writer, wherein the revised set of shots revises the original set of shots with the increased dosage of a beamlet in a shot in the original set of shots.
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Abstract
A method and system for fracturing or mask data preparation are presented in which a set of shots is determined for a multi-beam charged particle beam writer. The edge slope of a pattern formed by the set of shots is calculated. An edge of the pattern which has an edge slope below a target level is identified, and the dosage of a beamlet in a shot in the set of shots is increased to improve the edge slope. The improved edge slope remains less than the target level.
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Citations
16 Claims
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1. A method for fracturing or mask data preparation comprising:
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inputting an original set of shots for a multi-beam charged particle beam writer, wherein each multi-beam shot in the original set of shots comprises at least one beamlet; and
dosages for the original set of shots have not been corrected for long-range effects;calculating an edge slope of a pattern produced on a resist-coated surface by the original set of shots; identifying an edge of the pattern which has an edge slope below a target level; increasing the dosage of a beamlet in a shot in the original set of shots to improve the edge slope of the edge that has the edge slope below the target level, wherein the improved edge slope is closer to, without exceeding, the target level, wherein the resist comprises a resist threshold, and wherein the edge slope comprises a slope of the dosage, at the resist threshold, with respect to a linear dimension perpendicular to the edge of the pattern; and outputting a revised set of shots to the multi-beam charged particle beam writer, wherein the revised set of shots revises the original set of shots with the increased dosage of a beamlet in a shot in the original set of shots. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for fracturing or mask data preparation or proximity effect correction comprising:
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inputting an original set of shots for a multi-beam charged particle beam writer, wherein each multi-beam shot in the original set of shots comprises at least one beamlet; calculating an edge slope of a pattern produced on a resist-coated surface by the original set of shots, including correction for long-range effects; identifying an edge in the pattern which has an edge slope below a target level; increasing the dosage of a beamlet in a shot in the original set of shots to improve the edge slope of the edge that has the edge slope below the target level, wherein the improved edge slope is closer to, without exceeding, the target level, wherein the resist comprises a resist threshold, and wherein the edge slope comprises a slope of the dosage, at the resist threshold, with respect to a linear dimension perpendicular to the edge of the pattern; and outputting a revised set of shots to the multi-beam charged particle beam writer, wherein the revised set of shots revises the original set of shots with the increased dosage of a beamlet in a shot in the original set of shots. - View Dependent Claims (9, 10)
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11. A method for fracturing or mask data preparation or proximity effect correction comprising:
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determining a plurality of shots for a multi-beam charged particle beam writer, wherein each shot in the plurality of shots comprises at least one beamlet, wherein the plurality of shots forms a pattern on a resist-coated surface, wherein the step of determining comprises calculating an edge slope of the pattern formed from the plurality of shots before correction for long-range effects; identifying an edge of the pattern which has an edge slope below a target level; increasing the dosage of a beamlet in a shot in the plurality of shots to improve the edge slope of the edge that has the edge slope below the target level, wherein the improved edge slope is closer to, without exceeding, the target level, wherein the resist comprises a resist threshold, and wherein the edge slope comprises a slope of the dosage, at the resist threshold, with respect to a linear dimension perpendicular to the edge of the pattern; and outputting a revised plurality of shots to the multi-beam charged particle beam writer, wherein the revised plurality of shots revises the plurality of shots with the increased dosage of a beamlet in a shot in the plurality of shots. - View Dependent Claims (12, 13)
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14. A method for fracturing or mask data preparation or proximity effect correction comprising:
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determining a plurality of shots for a multi-beam charged particle beam writer, wherein each shot in the plurality of shots comprises at least one beamlet, wherein the plurality of shots forms a pattern on a resist-coated surface; performing proximity effect correction (PEC) to correct shot dosages for long-range effects for the plurality of shots; calculating an edge slope of the pattern formed from the plurality of shots on a resist-coated surface; identifying an edge of the pattern which has an edge slope below a target level; increasing the dosage of a beamlet in a shot in the plurality of shots to improve the edge slope of the edge that has the edge slope below the target level, wherein the improved edge slope is closer to, without exceeding, the target level, wherein the resist comprises a resist threshold, and wherein the edge slope comprises a slope of the dosage, at the resist threshold, with respect to a linear dimension perpendicular to the edge of the pattern; and outputting a revised set of shots to the multi-beam charged particle beam writer, wherein the revised set of shots revises the original set of shots with the increased dosage of a beamlet in a shot in the original set of shots. - View Dependent Claims (15, 16)
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Specification