Post-passivation interconnect structure

• US 9,613,914 B2
• Filed: 12/07/2011
• Issued: 04/04/2017
• Est. Priority Date: 12/07/2011
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chen, Hsien-Wei, Tsai, Hao-Yi, Lii, Mirng-Ji, Yu, Chen-Hua
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): IDA, GEOFFREY H
• Application Number:
  US13/313,811
• Publication Number:
  US 20130147033A1
• Time in Patent Office: 1,945 Days
• Field of Search: 257737
• CPC Class Codes: H01L 2224/02235 Reinforcing structures
• CPC Class Codes: H01L 2224/02255 Shape of the auxiliary member
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05027 the internal layer extending out of an opening
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05181 Tantalum [Ta] as principal constituent
• CPC Class Codes: H01L 2224/05186 with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/05552 in top view
• CPC Class Codes: H01L 2224/05555 being circular or elliptic
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13024 : the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/13113 : Bismuth [Bi] as principal constituent
• CPC Class Codes: H01L 2224/13116 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 23/3114 : the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 23/522 : including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 23/525 : with adaptable interconnections
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/04941 : TiN
• CPC Class Codes: H01L 2924/04953 : TaN
• CPC Class Codes: H01L 2924/12042 : LASER

Abstract

A semiconductor device includes a passivation layer overlying a semiconductor substrate, and an interconnect structure overlying the passivation layer. The interconnect structure includes a landing pad region and a dummy region electrically separated from each other. A protective layer overlies the interconnect structure and includes a first opening exposing a portion of the landing pad region and a second opening exposing a portion of the dummy region. A metal layer is formed on the exposed portion of landing pad region and the exposed portion of the dummy region. A bump is formed on the metal layer overlying the landing pad region.

Claims

1. A semiconductor device, comprising:

a semiconductor substrate comprising circuitry and a plurality of metal layers formed between dielectric layers operable to route electrical signals formed therein;

a passivation layer overlying the semiconductor substrate;

an interconnect structure overlying and interfacing a top surface of the passivation layer, the interconnect structure comprising a landing pad conductive element and a plurality of dummy conductive elements electrically separated from each other and electrically separated from the landing pad conductive element, wherein the landing pad conductive element and the dummy conductive elements are coplanar;

a protective layer overlying the interconnect structure and comprising a first opening exposing a portion of the landing pad region and a second opening exposing a portion of the dummy region;

a metal layer comprising a first portion on a topmost surface of the protective layer and on the exposed portion of the landing pad conductive element and a plurality of second portions on the topmost surface of the protective layer and on the exposed portion of the dummy conductive element, the plurality of second portions of the metal layer being electrically separated from the semiconductor substrate and from the first portion of the metal layer, and wherein the first portion and the plurality of second portions of the metal layer are coplanar; and

a single bump on the first portion of the metal layer overlying the landing pad conductive element, wherein the second portion of the metal layer is free of a bump;

wherein each of the plurality of conductive elements adjoins with a respective on of the plurality of second portions of the metal layer to from a plurality of pillars, the plurality of pillars surrounding the single bump in a plan view, and wherein the only bump surrounded by the plurality of pillars is the single bump.

2. The semiconductor device of claim 1, wherein the metal layer comprises at least one of a titanium layer, a copper layer, or a nickel layer.

3. The semiconductor device of claim 1, wherein the landing pad conductive element and the plurality of dummy conductive elements of the interconnect structure comprises a copper layer.

4. The semiconductor device of claim 1, wherein the protective layer comprises a plurality of second openings adjacent to the first opening, and the plurality of second portions of the metal layer fills the plurality of second openings.

5. The semiconductor device of claim 1, wherein the protective layer comprises polymer.

6. The semiconductor device of claim 1, further comprising a polymer layer formed between the passivation layer and the interconnect structure.

7. The semiconductor device of claim 1, further comprising a conductive pad formed on the semiconductor substrate, wherein the conductive pad is partially covered by the passivation layer, and the conductive pad is electrically connected to the landing pad conductive element of the interconnect structure and the conductive pad has a direct interface with a surface of the landing pad conductive element.

8. The semiconductor device of claim 7, further comprising a dummy pad formed on the semiconductor substrate and electrically separated from the conductive pad, wherein the dummy pad is partially covered by the passivation layer, and the dummy pad is electrically connected to at least one dummy conductive element of the plurality of dummy conductive elements of the interconnect structure, wherein the dummy pad has a direct interface with a surface of the at least one dummy conductive element.

9. The semiconductor device of claim 8, wherein the conductive pad and the dummy pad are formed of the same material and wherein the conductive pad and the dummy pad are coplanar.

15. The semiconductor device of claim 1, wherein the metal layer further comprises a seed layer comprised of copper or copper alloys.

19. The semiconductor device of claim 1, wherein the plurality of pillars surrounding the single bump are each spaced a first distance from the single bump.

20. The semiconductor device of claim 19, wherein an exposed top surface of the protective layer extends the first distance.

10. A semiconductor device, comprising:

a semiconductor substrate comprising circuitry and a plurality of inter-metal dielectric (IMD) layers and associated metal layers formed therein;

a conductive pad overlying the semiconductor substrate;

a passivation layer on the semiconductor substrate and exposing a portion of the conductive pad;

a post-passivation interconnect (PPI) structure having a first region overlying and extending along a top surface of the passivation layer and comprising a second region connected to the exposed portion of the conductive pad, wherein the second and first regions are contiguous conductive material and a third region electrically separated from the first region and the second region, wherein the first and third portions of the PPI structure are coplanar;

a polymer layer overlying the PPI structure and comprising a first opening exposing a portion of the first region of the PPI structure and a plurality of second openings exposing a portion of the third region of the PPI structure;

an under-bump-metallization (UBM) layer over the polymer layer and in the first opening of the polymer layer;

a metal layer over the polymer layer, in each of the plurality of second openings of the polymer layer thereby forming a metal pillar in each of the plurality of second openings, the metal pillars each electrically separated from the semiconductor substrate, wherein the UBM layer and the metal layer are coplanar; and

a single bump on the UBM layer, wherein the metal layer is free of a bump, and wherein the metal pillars each being spaced a same distance from the single bump.

11. The semiconductor device of claim 10, further comprising a dummy pad overlying the semiconductor substrate and electrically separated from the conductive pad, wherein the passivation layer exposes a portion of the dummy pad.

12. The semiconductor device of claim 10, wherein the metal layer comprises at least one of a titanium layer, a copper layer, or a nickel layer.

13. The semiconductor device of claim 10, further comprising another polymer layer between the passivation layer and the PPI structure.

14. The semiconductor device of claim 10, wherein the UBM layer and the metal layer are formed of the same material layer.

16. A semiconductor device, comprising:

a semiconductor substrate comprising circuitry and a plurality of metal layers formed between dielectric layers operable to route electrical signals formed therein;

a passivation layer overlying the semiconductor substrate;

an interconnect structure overlying and interfacing a top surface of the passivation layer, the interconnect structure comprising a first landing pad conductive element and a first plurality of dummy conductive elements electrically separated from each other and electrically separated from the first landing pad conductive element, wherein the first landing pad conductive element and the first plurality of dummy conductive elements are coplanar, and wherein the interconnect structure also includes a second landing pad conductive element and a second plurality of dummy conductive elements electrically separated from each other and electrically separated from the second landing pad conductive element, wherein the second landing pad conductive element and the second plurality of dummy conductive elements are coplanar;

a polymer layer disposed over the interconnect structure;

a first plurality of metal pillars each disposed in an opening in the polymer layer and a second plurality of metal pillars each disposed in an opening in the polymer layer, the first and second plurality of metal pillars being different, wherein the first plurality of metal pillars are electrically separated from each other and electrically separated from the first landing pad conductive element, wherein the second plurality of metal pillars are electrically separated from each other and electrically separated from the second landing pad conductive element, wherein each of the first plurality of metal pillars is disposed on a respective on of the first plurality of dummy conductive elements and the second plurality of metal pillars is disposed on a respective one of the second plurality of dummy conductive elements;

an under bump metallization (UBM) layer coplanar with the first plurality of metal pillars and the second plurality of metal pillars;

a first bump on a first portion of the UBM and electrically connected to the first landing pad conductive element, wherein the first plurality of metal pillars surrounds the first bump in a plan view; and

a second bump on a second portion of the UBM and electrically connected to the second landing pad conductive element, wherein the second plurality of metal pillars surrounds the second bump in a plan view.

17. The semiconductor device of claim 16, wherein each of the first plurality of metal pillars is spaced a first distance from the first bump.

18. The semiconductor device of claim 17, wherein an exposed top surface of the polymer layer extends the first distance.