AMOLED backplane structure and manufacturing method thereof
First Claim
1. An active matrix organic light emitting display (AMOLED) backplane structure, comprising multiple sub-pixels arranged in an array, wherein in each of the sub-pixels, the AMOLED backplane comprises:
- a thin-film transistor (TFT) substrate, a planarization layer formed on the TFT substrate, a pixel electrode formed on the planarization layer, a pixel definition layer formed on the pixel electrode, and a photo spacer formed on the pixel definition layer;
the TFT substrate comprises therein a switch TFT, a drive TFT, and a capacitor;
the pixel definition layer comprises an opening to expose a portion of the pixel electrodethe TFT substrate comprises a corrugation structure arranged in an area corresponding to the opening of the pixel definition layer, the corrugation structure comprising a plurality of raised sections and a recessed section formed between every two adjacent ones of the raised sections, the raised sections and the recessed sections having vertical dimensions identical to each other; and
an upper surface of a portion of the planarization layer and a portion of the pixel electrode that correspond to and are located above the corrugation structure have curved configurations corresponding to the corrugation structure.
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Abstract
The present invention provides an AMOLED backplane structure and a manufacturing method thereof. In each sub-pixel, a TFT substrate (TS) includes a corrugation structure (4) formed in an area corresponding to an opening (71) of a pixel definition layer (7). The corrugation structure (4) includes a plurality of raised sections (41) and a recessed section (42) formed between every two adjacent ones of the raised sections (41). An upper surface of a portion of the planarization layer (5) and a portion of a pixel electrode (6) that correspond to and are located above the corrugation structure (4) include curved surfaces corresponding to the corrugation structure (4). The AMOLED backplane structure helps ensure the planarization layer (5) is smooth and free of abrupt change sites and also makes the pixel electrode (6) in a form of a curved surface to increase an effective displaying surface, extend the lifespan of the OLED, reduce difficulty of manufacturing, and improve resolution.
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Citations
13 Claims
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1. An active matrix organic light emitting display (AMOLED) backplane structure, comprising multiple sub-pixels arranged in an array, wherein in each of the sub-pixels, the AMOLED backplane comprises:
- a thin-film transistor (TFT) substrate, a planarization layer formed on the TFT substrate, a pixel electrode formed on the planarization layer, a pixel definition layer formed on the pixel electrode, and a photo spacer formed on the pixel definition layer;
the TFT substrate comprises therein a switch TFT, a drive TFT, and a capacitor; the pixel definition layer comprises an opening to expose a portion of the pixel electrode the TFT substrate comprises a corrugation structure arranged in an area corresponding to the opening of the pixel definition layer, the corrugation structure comprising a plurality of raised sections and a recessed section formed between every two adjacent ones of the raised sections, the raised sections and the recessed sections having vertical dimensions identical to each other; and an upper surface of a portion of the planarization layer and a portion of the pixel electrode that correspond to and are located above the corrugation structure have curved configurations corresponding to the corrugation structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
- a thin-film transistor (TFT) substrate, a planarization layer formed on the TFT substrate, a pixel electrode formed on the planarization layer, a pixel definition layer formed on the pixel electrode, and a photo spacer formed on the pixel definition layer;
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9. An active matrix organic light emitting display (AMOLED) backplane structure, comprising multiple sub-pixels arranged in an array, wherein in each of the sub-pixels, the AMOLED backplane comprises:
- a thin-film transistor (TFT) substrate, a planarization layer formed on the TFT substrate, a pixel electrode formed on the planarization layer, a pixel definition layer formed on the pixel electrode, and a photo spacer formed on the pixel definition layer;
the TFT substrate comprises therein a switch TFT, a drive TFT, and a capacitor; the pixel definition layer comprises an opening to expose a portion of the pixel electrode; the TFT substrate comprises a corrugation structure arranged in an area corresponding to the opening of the pixel definition layer, the corrugation structure comprising a plurality of raised sections and a recessed section formed between every two adjacent ones of the raised sections, the raised sections and the recessed sections having vertical dimensions identical to each other; and an upper surface of a portion of the planarization layer and a portion of the pixel electrode that correspond to and are located above the corrugation structure have curved configurations corresponding to the corrugation structure; wherein in each of the sub-pixels, the TFT substrate comprises a base plate, first and second gate terminals formed on the base plate and spaced from each other, a gate insulation layer formed on the first and second gate terminals and the base plate, first and second semiconductor layers formed on the gate insulation layer and respectively located on the first and second gate terminals, an etch stop layer formed on the first and second semiconductor layers and the gate insulation layer, a first source terminal formed on the etch stop layer and in contact engagement with the first semiconductor layer, a first drain terminal formed on the etch stop layer and in contact engagement with the first semiconductor layer and the second gate terminal, a second source terminal formed on the etch stop layer and in contact engagement with the second semiconductor layer, a second drain terminal formed on the etch stop layer and in contact engagement with the second semiconductor layer, and a protective layer formed on the etch stop layer, the first source and drain terminals, and the second source and drain terminals; the first gate terminal, the first semiconductor layer, the first source terminal, and the first drain terminal constituting the switch TFT, the second gate terminal, the second semiconductor layer, the second source terminal, and the second drain terminal constituting the drive TFT, the second gate terminal and the second source terminal also constituting the capacitor, the pixel electrode being in contact engagement with the second drain terminal; wherein the corrugation structure is formed in a portion of or all the sub-pixels; and wherein the pixel electrode comprises a material of indium tin oxide (ITO). - View Dependent Claims (10, 11, 12, 13)
- a thin-film transistor (TFT) substrate, a planarization layer formed on the TFT substrate, a pixel electrode formed on the planarization layer, a pixel definition layer formed on the pixel electrode, and a photo spacer formed on the pixel definition layer;
Specification