MOSFET termination trench

• US 9,614,043 B2
• Filed: 02/09/2012
• Issued: 04/04/2017
• Est. Priority Date: 02/09/2012
• Status: Active Grant

• Current Assignee: Vishay Siliconix
• Original Assignee: Vishay Siliconix
• Inventors: Azam, Misbah Ul, Terrill, Kyle
• Primary Examiner(s): Smith, Zandra
• Assistant Examiner(s): REIDA, MOLLY KAY
• Application Number:
  US13/370,243
• Publication Number:
  US 20130207227A1
• Time in Patent Office: 1,881 Days
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02595 polycrystalline
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/31053 involving a dielectric removal step
• CPC Class Codes: H01L 21/76237 introducing impurities in trench side or bottom walls, e.g. for forming channel stoppers or alter isolation behavior
• CPC Class Codes: H01L 29/0615 by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] LDD or drain offset regions H01L29/7833
• CPC Class Codes: H01L 29/407 Recessed field plates, e.g. trench field plates, buried field plates
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/66734 with a step of recessing the gate electrode, e.g. to form a trench gate electrode
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A method, in one embodiment, can include forming a core trench and a termination trench in a substrate. The termination trench is wider than the core trench. In addition, a first oxide can be deposited that fills the core trench and lines the sidewalls and bottom of the termination trench. A first polysilicon can be deposited into the termination trench. A second oxide can be deposited above the first polysilicon. A mask can be deposited above the second oxide and the termination trench. The first oxide can be removed from the core trench. A third oxide can be deposited that lines the sidewalls and bottom of the core trench. The first oxide within the termination trench is thicker than the third oxide within the core trench.

Claims

1. A semiconductor device comprising:

a termination trench formed in a substrate, said termination trench comprises;

a first oxide that lines the sidewalls and bottom of said termination trench; and

a first polysilicon located between said first oxide and extending more than half the depth of said termination trench;

a core trench formed in said substrate, said core trench comprises;

a second oxide that lines the sidewalls and bottom of said core trench; and

a second polysilicon located between said second oxide, said second polysilicon is deeper than said first polysilicon;

a mesa of said substrate located between said core trench and said termination trench, a surface of said termination trench is a first surface of said mesa and a surface of said core trench is a second surface of said mesa; and

a third oxide located above said mesa and directly contacts said first oxide, said first polysilicon, and said second oxide;

said termination trench is wider than said core trench, said termination trench is deeper than said core trench, said first oxide within said termination trench is thicker than said second oxide within said core trench, and said first polysilicon is wider than said second polysilicon.

2. The semiconductor device of claim 1, wherein said termination trench is approximately twice as wide as said core trench.

3. The semiconductor device of claim 1, wherein said third oxide is a layer that directly contacts said second polysilicon, said first oxide, said first polysilicon, and said second oxide.

4. The semiconductor device of claim 1, wherein said mesa comprises a doped region within its upper surface and said doped region is coupled to a voltage ground.

5. The semiconductor device of claim 1, wherein said core trench further comprises:

a third polysilicon located between said second oxide; and

dielectric material located between said second polysilicon and said third polysilicon.

6. The semiconductor device of claim 1, further comprising:

a gate core trench formed in said substrate that is less than half as deep as said core trench.

7. The semiconductor device of claim 1, wherein said semiconductor device is an N-channel device.

8. The semiconductor device of claim 1, wherein said semiconductor device is an P-channel device.

9. The semiconductor device of claim 1, wherein said core trench is a source core trench.

10. A semiconductor device comprising:

a termination trench formed in a substrate, said termination trench comprises;

a first oxide that lines the sidewalls and bottom of said termination trench; and

a first polysilicon located between said first oxide and extending more than half the depth of said termination trench;

a core trench formed in said substrate, said core trench comprises;

a second oxide that lines the sidewalls and bottom of said core trench; and

a second polysilicon located between said second oxide, said second polysilicon is deeper than said first polysilicon;

a mesa of said substrate located between said core trench and said termination trench, a surface of said termination trench is a first surface of said mesa and a surface of said core trench is a second surface of said mesa;

said mesa comprises a doped region; and

a third oxide located above said mesa and directly contacts said first oxide, said first polysilicon, and said second oxide;

said termination trench is wider than said core trench, said termination trench is deeper than said core trench, said first oxide within said termination trench is thicker than said second oxide within said core trench, and said first polysilicon is wider than said second polysilicon.

11. The semiconductor device of claim 10, wherein said termination trench is approximately twice as wide as said core trench.

12. The semiconductor device of claim 10, wherein said third oxide is a layer that contacts said second polysilicon, said first oxide, said first polysilicon, and said second oxide.

13. The semiconductor device of claim 10, wherein said core trench further comprises:

a third polysilicon located between said second oxide.

14. The semiconductor device of claim 10, wherein said core trench is a source core trench.

15. A semiconductor device comprising:

a termination trench formed in a substrate, said termination trench comprises;

a first oxide that lines the sidewalls and bottom of said termination trench;

said first oxide comprises a silicon dioxide; and

a first polysilicon located between said first oxide and extending more than half the depth of said termination trench;

a core trench formed in said substrate, said core trench comprises;

a second oxide that lines the sidewalls and bottom of said core trench; and

a second polysilicon located between said second oxide, said second polysilicon is deeper than said first polysilicon;

a mesa of said substrate located between said core trench and said termination trench, a surface of said termination trench is a first surface of said mesa and a surface of said core trench is a second surface of said mesa; and

a third oxide located above said mesa and directly contacts said first oxide, said first polysilicon, and said second oxide;

said termination trench is wider than said core trench, said termination trench is deeper than said core trench, said first oxide within said termination trench is thicker than said second oxide within said core trench, and said first polysilicon is wider than said second polysilicon.

16. The semiconductor device of claim 15, wherein said core trench further comprises:

a third polysilicon located between said second oxide.

17. The semiconductor device of claim 15, wherein said semiconductor device an N-channel device.

18. The semiconductor device of claim 15, wherein said semiconductor device an P-channel device.

19. The semiconductor device of claim 15, wherein said core trench is a source core trench.

20. The semiconductor device of claim 15, wherein said mesa comprises a doped region within its upper surface.