Semiconductor device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a gate insulating film covering the gate electrode;
an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc and including a particle of indium oxide represented by In2O3, wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating film interposed therebetween; and
a source electrode and a drain electrode over a source region and a drain region in the oxide semiconductor layer,wherein the particle has a wedge shape.
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Accused Products
Abstract
An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc (IGZO) and a particle of indium oxide; a gate electrode overlapping with a channel formation region in the oxide semiconductor layer with a gate insulating film interposed therebetween; and a source electrode and a drain electrode overlapping with a source region and a drain region in the oxide semiconductor layer. The semiconductor device may be a top-gate oxide semiconductor transistor or a bottom-gate oxide semiconductor transistor. The oxide semiconductor layer may be formed over or below the source electrode and the drain electrode.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating film covering the gate electrode; an oxide semiconductor layer comprising an oxide containing indium, gallium, and zinc and including a particle of indium oxide represented by In2O3, wherein the oxide semiconductor layer overlaps with the gate electrode with the gate insulating film interposed therebetween; and a source electrode and a drain electrode over a source region and a drain region in the oxide semiconductor layer, wherein the particle has a wedge shape. - View Dependent Claims (2, 3, 4)
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5. A semiconductor device comprising:
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a gate electrode over a substrate; an oxide semiconductor layer including a channel formation region, a source region, and a drain region, the channel formation region being adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode being in contact with the source region and the drain region, wherein the oxide semiconductor layer comprises an oxide containing indium, gallium, and zinc and includes a particle of indium oxide represented by In2O3, wherein the oxide semiconductor layer includes; a first portion containing indium, gallium, zinc and oxygen; and a second portion, wherein a density of indium in the second portion is lower than a density of indium in the first portion, wherein a density of oxygen in the second portion is lower than a density of oxygen in the first portion, wherein the second portion has higher conductivity than other portions of the oxide semiconductor layer, and wherein the particle has a wedge shape. - View Dependent Claims (6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode over a substrate; an oxide semiconductor layer including a channel formation region, a source region, and a drain region, the channel formation region being adjacent to the gate electrode with a gate insulating film interposed therebetween; and a source electrode and a drain electrode being in electrical contact with the source region and the drain region, wherein the oxide semiconductor layer comprises an oxide containing indium, gallium, and zinc and includes a particle of indium oxide, wherein the oxide semiconductor layer includes; a first portion containing indium, gallium, zinc and oxygen; and a second portion, wherein a density of indium in the second portion is lower than a density of indium in the first portion, wherein a density of oxygen in the second portion is lower than a density of oxygen in the first portion, wherein the second portion has higher conductivity than other portions of the oxide semiconductor layer, and wherein the particle has a wedge shape. - View Dependent Claims (11, 12, 13, 14, 15)
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Specification